1.6‐Inch Transparent Micro‐Display with Pixel Circuit Integrated microLED Chip Array by Misalignment‐Free Transfer
Abstract
Abstract Recent advances in mass transfer technology are expected to bring next‐generation micro light‐emitting diodes (µLED) displays into reality, although reliable integration of the active‐matrix backplane with the transferred µLEDs remains as a challenge. Here, the µLED display technology is innovated by demonstrating pixel circuit‐integrated micro‐LEDs (PIMLEDs) and integrating them onto a transparent glass substrate. The PIMLED comprises of low‐temperature poly‐silicon transistors and GaN µLED. The square‐shaped PIMLED is designed to secure a larger process margin but to reduce misalignment in the subsequent bonding process. Its unique four‐fold rotational symmetric design together with concentric circular pixel electrodes of the substrate makes their massive transfer compatible with intrinsic randomness of fluidic‐based transfer and free from angular misalignment during wafer bonding. The vertically integrated pixels show similar optical and electrical properties regardless of four possible arrangements. It is demonstrated that a 96 × 96 PIMLED display on a transparent glass substrate, which is expected to open a door to novel form‐factor free and transparent µLED displays.
Article Details
Authors (23)
Kyungwook Hwang
Samsung Advanced Institute of Technology Suwon 16678 South Korea
Junsik Hwang
Samsung Advanced Institute of Technology Suwon 16678 South Korea
Yongchan Kim
School of Electronic Engineering Soongsil University Seoul 06938 South Korea
Sanghoon Song
Linac Coherent Light Source, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States
Kiho Kong
Youngtek Oh
Samsung Advanced Institute of Technology Suwon 16678 South Korea
Deukseok Chung
Samsung Advanced Institute of Technology Suwon 16678 South Korea
Min‐chul Yu
Samsung Advanced Institute of Technology Suwon 16678 South Korea
Dongho Kim
Spectroscopy Laboratory for Functional π-Electronic Systems and Department of Chemistry
Joon‐Yong Park
Samsung Advanced Institute of Technology Suwon 16678 South Korea
Jinho Moon
School of Electronic Engineering Soongsil University Seoul 06938 South Korea
Sungi Kim
Samsung Advanced Institute of Technology Suwon 16678 South Korea
Tae‐Gon Kim
Samsung Advanced Institute of Technology Suwon 16678 South Korea
Gyuhyung Lee
Department of Intelligent Semiconductor Soongsil University Seoul 06938 South Korea
Min Jae Yeom
School of Electronic Engineering Soongsil University Seoul 06938 South Korea
Joosung Kim
Dong‐Chul Shin
Samsung Advanced Institute of Technology Suwon 16678 South Korea
Dong Kyun Kim
Samsung Advanced Institute of Technology Suwon 16678 South Korea
Seog Woo Hong
Samsung Advanced Institute of Technology Suwon 16678 South Korea
Hyun‐Joon Kim‐Lee
Samsung Advanced Institute of Technology Suwon 16678 South Korea
Jaewook Jeong
Hojin Lee
Geonwook Yoo