A Charge‐Coupled Phototransistor Enabling Synchronous Dynamic and Static Image Detection

S Shun Feng (Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China) R Ruyue Han C Chi Liu D Dayu Jia (School of Information Institution Liaoning University 66 Chongshan Road Shenyang 110036 China) G Guoteng Zhang (Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China) X Xi Zhu B Bo Li Y Yun Sun (Immunological Materials Research Group 1) C Chuang Li (Institute of Advanced Technology) Y Yuping Gao T Tonglei Cheng (State Key Laboratory of Synthetical Automation for Process Industries College of Information Science and Engineering Northeastern University 11 Wenhua Road Shenyang 110819 China) Z Zheng Han H Hui‐Ming Cheng (Faculty of Materials Science and Energy Engineering Shenzhen University of Advanced Technology Shenzhen China) D Dong‐Ming Sun (Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China)

Abstract

AbstractEmerging machine vision applications require efficient detection of both dynamic events and static grayscale information within visual scenes. Current dynamic vision and active pixel sensors (DAVIS) technology integrates event‐driven vision sensors and active pixel sensors within single pixels. However, the complex multi‐component pixel architecture, typically requiring 15–50 transistors, limits integration density, increases power consumption, and complicates clock synchronization. Here, a charge‐coupled phototransistor is presented that uses dual photosensitive capacitors to provide gate voltage to a single transistor channel, enabling simultaneous capture of dynamic and static information, surpassing existing DAVIS technology. Under illumination, both top and bottom gates generate photogenerated electrons through a charge‐coupling effect; electrons in the top gate are blocked by a thick dielectric layer, producing a stable current change for static grayscale detection, while electrons in the bottom gate tunnel through a thin dielectric layer, creating transient current spikes for dynamic event detection. This device demonstrates a dynamic range of 120 dB and a response time of 15 µs, comparable to traditional DAVIS pixels, while significantly reducing power consumption to 10 pW and overcoming clock synchronization issues. This charge‐coupled phototransistor paves the way for the development of high‐performance, low‐power, and highly integrated machine vision technology.

Article Details

Volume / Issue Vol. 37, Issue 24
Published June 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

S

Shun Feng

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China

R

Ruyue Han

C

Chi Liu

D

Dayu Jia

School of Information Institution Liaoning University 66 Chongshan Road Shenyang 110036 China

G

Guoteng Zhang

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China

X

Xi Zhu

B

Bo Li

Y

Yun Sun

Immunological Materials Research Group 1

C

Chuang Li

Institute of Advanced Technology

Y

Yuping Gao

T

Tonglei Cheng

State Key Laboratory of Synthetical Automation for Process Industries College of Information Science and Engineering Northeastern University 11 Wenhua Road Shenyang 110819 China

Z

Zheng Han

H

Hui‐Ming Cheng

Faculty of Materials Science and Energy Engineering Shenzhen University of Advanced Technology Shenzhen China

D

Dong‐Ming Sun

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China