A Highly Stable Organic–Inorganic Hybrid Electron Transport Layer for Ultraflexible Organic Photodiodes

T Theodorus Jonathan Wijaya S Sixing Xiong (RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama Japan) K Kosei Sasaki Y Yutaro Kato (Department of Electrical Engineering and Information Systems Graduate School of Engineering The University of Tokyo 7‐3‐1 Hongo Bunkyo‐ku Tokyo 113‐8656 Japan) K Kazuma Mori M Mari Koizumi (Department of Electrical Engineering and Information Systems Graduate School of Engineering The University of Tokyo 7‐3‐1 Hongo Bunkyo‐ku Tokyo 113‐8656 Japan) S Sunghoon Lee (Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan) M Masaki Kobayashi Y Yinhua Zhou K Kenjiro Fukuda (Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan) T Tomoyuki Yokota T Takao Someya (Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan)

Abstract

Abstract Flexible organic photodiodes (OPDs) are used to detect light in system‐scale demonstrations of skin‐conformable devices. However, the detectivity of OPDs deteriorates under various environmental conditions, such as light irradiation, air exposure, and heating. This decrease in detectivity is observed in OPDs with a widely used sol–gel ZnO (ZnO SG) electron transport layer (ETL), where the dark current at the reverse bias increased by several orders of magnitude. In this study, a low dark current and stable detectivity with respect to the aforementioned external changes are achieved. The enhanced stability stems from the suppression of the increase in dark current realized by using a mixture of an organic polymer, polyethyleneimine (PEIE), and inorganic crystals (ZnO nanoparticles) to create a nanoparticle‐based, Zn‐chelated PEIE (PEI‐Zn NP) as the ETL of the OPDs. The detectivities of OPDs with PEI‐Zn NP are 89%, 84%, and 93% of their original values after light irradiation, air storage, and thermal heating, respectively. In contrast, their ZnO SG counterparts exhibited stabilities of only 9.9%, 55%, and 2.6%, respectively, in the same tests. Furthermore, the use of PEI‐Zn NP ETL in ultraflexible OPDs is demonstrated by the maintained detectivity after 5000 cycles of device bending.

Article Details

Volume / Issue Vol. 37, Issue 21
Published May 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

T

Theodorus Jonathan Wijaya

S

Sixing Xiong

RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama Japan

K

Kosei Sasaki

Y

Yutaro Kato

Department of Electrical Engineering and Information Systems Graduate School of Engineering The University of Tokyo 7‐3‐1 Hongo Bunkyo‐ku Tokyo 113‐8656 Japan

K

Kazuma Mori

M

Mari Koizumi

Department of Electrical Engineering and Information Systems Graduate School of Engineering The University of Tokyo 7‐3‐1 Hongo Bunkyo‐ku Tokyo 113‐8656 Japan

S

Sunghoon Lee

Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

M

Masaki Kobayashi

Y

Yinhua Zhou

K

Kenjiro Fukuda

Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

T

Tomoyuki Yokota

T

Takao Someya

Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan