A Zinc Ion Capacitor‐Based Fluidic Memristor

P Pei Tang (Chinese Academy of Sciences , , 72 Wenhua Road , ,) Z Zhancai Qiu (Department of Materials Science and Engineering Sun Yat‐sen University Guangzhou 510275 China) Y Yihao Zhu K Kekang Liu (School of Materials Sun Yat‐sen University Shenzhen 518107 China) Z Zhiyuan Luo P Pengwei Jing (School of Materials Science and Engineering Sun Yat‐Sen University Guangzhou 510275 China) Z Zhiqun Tao (Department of Materials Science and Engineering Sun Yat‐sen University Guangzhou 510275 China) Y Yining Lao (Department of Materials Science and Engineering Sun Yat‐sen University Guangzhou 510275 China) S Shiyin Xie (Department of Materials Science and Engineering Sun Yat‐sen University Guangzhou 510275 China) C Chuhao Ye (School of Materials Science and Engineering Sun Yat‐Sen University Guangzhou P. R. China) J Jian Zhu (General Hospital of Central Theater Command of People’s Liberation Army, Medical College of Wuhan University of Science and Technology, Wuhan, China) Y Yanghui Liu Q Qingyun Dou (School of Materials Science and Engineering Sun Yat‐Sen University Guangzhou 510275 China) X Xingbin Yan (School of Materials Science and Engineering, Sun Yat-Sen University 6 , Guangzhou 510275,)

Abstract

Abstract The intersection of electrochemistry and neuroscience offers profound insights into ionotronic systems. Here, a zinc‐ion capacitor‐based fluidic memristor (ZIC‐FM) is presented that emulates brain‐like memory functions through nonlinear ion dynamics in electrochemical capacitors. This device functions through voltage‐controlled nonlinear zinc ion plating (under negative bias) and stripping (under positive bias) within its nanoporous carbon electrode architecture, generating hysteretic and history‐dependent resistive switching behavior. It is shown that the ZIC‐FM successfully replicates two key forms of short‐term synaptic plasticity, paired‐pulse facilitation (PPF) and paired‐pulse depression (PPD), closely mimicking biological neural behavior. This work advances the development of fluidic neuromorphic devices that unify energy storage and ionotronic memory, opening new avenues for bio‐inspired computing systems.

Article Details

Volume / Issue Vol. 38, Issue 6
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

P

Pei Tang

Chinese Academy of Sciences , , 72 Wenhua Road , ,

Z

Zhancai Qiu

Department of Materials Science and Engineering Sun Yat‐sen University Guangzhou 510275 China

Y

Yihao Zhu

K

Kekang Liu

School of Materials Sun Yat‐sen University Shenzhen 518107 China

Z

Zhiyuan Luo

P

Pengwei Jing

School of Materials Science and Engineering Sun Yat‐Sen University Guangzhou 510275 China

Z

Zhiqun Tao

Department of Materials Science and Engineering Sun Yat‐sen University Guangzhou 510275 China

Y

Yining Lao

Department of Materials Science and Engineering Sun Yat‐sen University Guangzhou 510275 China

S

Shiyin Xie

Department of Materials Science and Engineering Sun Yat‐sen University Guangzhou 510275 China

C

Chuhao Ye

School of Materials Science and Engineering Sun Yat‐Sen University Guangzhou P. R. China

J

Jian Zhu

General Hospital of Central Theater Command of People’s Liberation Army, Medical College of Wuhan University of Science and Technology, Wuhan, China

Y

Yanghui Liu

Q

Qingyun Dou

School of Materials Science and Engineering Sun Yat‐Sen University Guangzhou 510275 China

X

Xingbin Yan

School of Materials Science and Engineering, Sun Yat-Sen University 6 , Guangzhou 510275,