Adaptive Epitaxy of C‐Si‐Ge‐Sn: Customizable Bulk and Quantum Structures
Abstract
Abstract The successful demonstration of (Si)Ge 1‐x Sn x alloys as direct‐gap materials for infrared lasers has driven intense research on group IV‐based devices for nanoelectronics, energy harvesting, and quantum computing applications. The material palette of direct‐gap group‐IV alloys can be further extended by introducing carbon to fine‐tune their structural and electronic properties, significantly expanding their functionality. This work presents heteroepitaxial growth of C(Si)GeSn alloys using an industry‐standard reduced‐pressure chemical vapor deposition reactor. The introduction of CBr 4 as a precursor enables controlled incorporation of C atoms (<1 at.%) into the epilayer lattice, while simultaneously increasing the Sn content in the CGeSn alloy up to ≈18 at.%. Carbon plays a key role in modulating strain, stabilizing the crystal structure, and influencing material properties. By leveraging alloying and strain engineering, quaternary CSiGeSn bulk layers and CGeSn/GeSn heterostructures are epitaxially grown. The impact of C incorporation on optical emission is investigated in LEDs based on CGeSn/GeSn multiple quantum wells, demonstrating enhanced near‐infrared emission at 2.54 µm, which is sustained up to room temperature.
Article Details
Authors (16)
Omar Concepción
Institute of Semiconductor Nanoelectronics, Peter Grünberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich 2 , 52428 Jülich,
Ambrishkumar J. Devaiya
Peter Gruenberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies Forschungszentrum Juelich 52428 Juelich Germany
Marvin H. Zoellner
IHP - Leibniz Institute for High Performance Microelectronics 1 , Frankfurt (Oder) 15236,
Markus A. Schubert
IHP–Leibniz Institut für innovative Mikroelektronik 15236 Frankfurt (Oder) Germany
Florian Bärwolf
Lukas Seidel
Institute of Semiconductor Engineering University of Stuttgart 70569 Stuttgart Germany
Vincent Reboud
CEA LETI Grenoble 38000 France
Andreas T. Tiedemann
Peter Gruenberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies Forschungszentrum Juelich 52428 Juelich Germany
Jin‐Hee Bae
Peter Gruenberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies Forschungszentrum Juelich 52428 Juelich Germany
Alexei Tchelnokov
CEA LETI Grenoble 38000 France
Qing‐Tai Zhao
Peter Gruenberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies Forschungszentrum Juelich 52428 Juelich Germany
Christopher A. Broderick
School of Physics University College Cork Cork T12 YN60 Ireland
Michael Oehme
Giovanni Capellini
IHP - Leibniz Institute for High Performance Microelectronics 1 , Frankfurt (Oder) 15236,
Detlev Grützmacher
Dan Buca
Institute of Semiconductor Nanoelectronics, Peter Grünberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich 2 , 52428 Jülich,