Advances in Topological Thermoelectrics: Harnessing Quantum Materials for Energy Applications

G Guangsai Yang (State Key Laboratory of Crystal Materials Tianjin Key Laboratory of Functional Crystal Materials Institute of Functional Crystal Tianjin University of Technology Tianjin 300384 China) L Lina Sang (State Key Laboratory of Crystal Materials Tianjin Key Laboratory of Functional Crystal Materials Institute of Functional Crystal Tianjin University of Technology Tianjin 300384 China) C Chao Zhang K Khay See (Institute for Superconducting and Electronic Materials Faculty of Engineering and Information Science University of Wollongong, Innovation Campus Squires Way North Wollongong NSW 2500 Australia) A Alex Hamilton (School of Physics University of New South Wales Sydney NSW 2082 Australia) M Michael Fuhrer (School of Physics and Astronomy Monash University Clayton Victoria 3800 Australia) N Ning Ye (State Key Laboratory of Crystal Materials, Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, College of Materials Science and Engineering) G G. Jeffrey Snyder (Department of Materials Science and Engineering) X Xiaolin Wang (School of Pharmacy and State Key Laboratory of Quality Research in Chinese Medicine)

Abstract

Abstract Thermoelectric (TE) effect, which enables the direct conversion of heat into electricity or vice versa, has great importance for condensed matter physics and material science due to its great potential for sustainable energy applications. Topological materials, with their topologically nontrivial band structures and rich physical phenomena, offer exciting opportunities for achieving efficient TE energy conversion. Here, an overview of the recent theoretical is provided and experimental advances at the intersection of topology and thermoelectricity. The unique features of topological materials are examined, such as band inversion, topological surface/edge states, linear Dirac/Weyl bands, and Berry curvature, affect their TE transport properties. Additionally, the potential of band topology to enhance both longitudinal and transverse TE performance is discussed. The current challenges and prospects for further advancing topological TE materials and devices are identified, aiming to develop high‐performance TE materials and devices.

Article Details

Volume / Issue Vol. 37, Issue 39
Published October 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (9)

G

Guangsai Yang

State Key Laboratory of Crystal Materials Tianjin Key Laboratory of Functional Crystal Materials Institute of Functional Crystal Tianjin University of Technology Tianjin 300384 China

L

Lina Sang

State Key Laboratory of Crystal Materials Tianjin Key Laboratory of Functional Crystal Materials Institute of Functional Crystal Tianjin University of Technology Tianjin 300384 China

C

Chao Zhang

K

Khay See

Institute for Superconducting and Electronic Materials Faculty of Engineering and Information Science University of Wollongong, Innovation Campus Squires Way North Wollongong NSW 2500 Australia

A

Alex Hamilton

School of Physics University of New South Wales Sydney NSW 2082 Australia

M

Michael Fuhrer

School of Physics and Astronomy Monash University Clayton Victoria 3800 Australia

N

Ning Ye

State Key Laboratory of Crystal Materials, Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, College of Materials Science and Engineering

G

G. Jeffrey Snyder

Department of Materials Science and Engineering

X

Xiaolin Wang

School of Pharmacy and State Key Laboratory of Quality Research in Chinese Medicine