Amidation‐Retarded Synthesis of Perovskite Quantum Dots with Low Defect Density and Enhanced Carrier Transport for Efficient Light Emitting Diodes and Solar Cells

Y Yuqin Su (MIIT Key Laboratory of Advanced Display Materials and Devices Jiangsu Province Engineering Research Center of Quantum Dot Display Institute of Optoelectronics & Nanomaterials School of Materials Science and Engineering Nanjing University of Science and Technology Nanjing Jiangsu China) H Hengyang Xiang (Key Laboratory of New Display Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering) Y Yakun Wang H Huifeng Li Y Yifei Wang X Xinyi Lv M Min Xie S Shengli Zhang Z Zhiyong Fan J Jianyu Yuan L Liangsheng Liao (Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou Jiangsu 215123 China) H Haibo Zeng

Abstract

Abstract Perovskite quantum dots (PQDs) are promising for both solar cells (SCs) and light emitting diodes (LEDs) for their excellent optoelectronic characteristics and solution‐processable fabrication. One of the general limitations for these two kinds of devices is that high defect density and poor charge transport, resulting from the unavoidable amidation‐induced PbX 2 precipitation at high reaction temperature. In this work, an amidation‐retarded synthesis strategy is proposed to prevent the PbX 2 precipitation and subsequent defect formation. Covalent metal halides are introduced to interrupt amidation by reacting with deprotonated oleic acid/protonated oleylamine. Then, free acids/amines are released to coordinate with PbX 2 and form regular lead‐halide octahedra during nucleation‐growth process. The synthesized CsPbI 3 PQDs exhibit lower defect density (5.1 × 10 17 cm −3 ), higher PLQY (92%) and better charge output capacity (≈8 times improvement). As a result, the LEDs and SCs achieve a maximum external quantum efficiency of 28.71% and power conversion efficiency of 16.20%, respectively, representing the state‐of‐the‐art performance. Furthermore, the universality of such strategy has been demonstrated in red/green/blue LEDs, and could be expected in other optoelectronic devices.

Article Details

Volume / Issue Vol. 37, Issue 35
Published September 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

Y

Yuqin Su

MIIT Key Laboratory of Advanced Display Materials and Devices Jiangsu Province Engineering Research Center of Quantum Dot Display Institute of Optoelectronics & Nanomaterials School of Materials Science and Engineering Nanjing University of Science and Technology Nanjing Jiangsu China

H

Hengyang Xiang

Key Laboratory of New Display Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering

Y

Yakun Wang

H

Huifeng Li

Y

Yifei Wang

X

Xinyi Lv

M

Min Xie

S

Shengli Zhang

Z

Zhiyong Fan

J

Jianyu Yuan

L

Liangsheng Liao

Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou Jiangsu 215123 China

H

Haibo Zeng