Anomalous Phase Change in SbSe <i> <sub>x</sub> </i> Memristors for Ultrafast Image Encryption
Abstract
Abstract Complex electrical nonlinearity process in neurons is believed to be the origin of high‐level cognition, highly desired for an electronic device with rich dynamics. Here, an anomalous phase transition in the semiconducting SbSe x thin film is observed in situ, which includes not only the conventional phase transition process (amorphous to crystalline) but also involves the Sb metallic nucleus growth that has never been observed before. Theoretical simulation results show that when Sb or Se vacancies are introduced into the SbSe x , Joule heat will accumulate near the vacancy centers, causing an anomalous phase transition in a localized region, thereby giving the defective memristor a unique N‐shape negative differential resistance (NDR) effect. These rich nonlinear electric switching dynamics provide a chaotic system for ultra‐fast image encryption that is at least two orders of magnitude faster than current techniques. This work builds a novel theory horizon as well as extends brand‐new application area of phase change electronics.
Article Details
Authors (11)
Guangdong Zhou
Dengshun Gu
College of Artificial Intelligence Chongqing Key Laboratory of Brain‐inspired Computing and Intelligent Chips Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education) Southwest University Chongqing 400715 China
Jin Ye
Department of Pharmaceutics, State Key Laboratory of Natural Medicines, China Pharmaceutical University
Bai Sun
Frontier Institute of Science and Technology Interdisciplinary Research Center of Frontier science and technology State Key Laboratory for Strength and Vibration of Mechanical Structures Engineering Research Center of Key Materials for Efficient Utilization of Clean Energy of Shaanxi Province Xi'an Key Laboratory of Electronic Devices and Material Chemistry Institute of New Concept Sensors and Molecular Materials Shaanxi Key Laboratory of New Conceptual Sensors and Molecular Materials Xi'an...
Hang Shi
Haofeng Ran
College of Artificial Intelligence Chongqing Key Laboratory of Brain‐inspired Computing and Intelligent Chips Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education) Southwest University Chongqing 400715 China
Musha Ji'e
College of Artificial Intelligence Chongqing Key Laboratory of Brain‐inspired Computing and Intelligent Chips Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education) Southwest University Chongqing 400715 China
Xiaofang Hu
Key Laboratory of Luminescence Analysis and Molecular Sensors, College of Artificial Intelligence, Southwest University 2 , Chongqing,
Lidan Wang
Shukai Duan
College of Artificial Intelligence Chongqing Key Laboratory of Brain‐Inspired Computing and Intelligent Chips Key Laboratory of Luminescence Analysis and Molecular Sensors (Ministry of Education) Southwest University Chongqing China
Haifeng Ling