Antisolvent‐Free Dual‐Anion Regulation for High‐Efficient Sn‐Pb and All‐perovskite Tandem Solar Cells
Abstract
AbstractMixed tin‐lead (Sn‐Pb) perovskites are integral to all‐perovskite tandem solar cells (TSCs), offering significant potential to surpass the theoretical efficiency limits of single‐junction solar cells. However, the rapid crystallization of Sn‐Pb perovskite thin films and the propensity of Sn2+ to oxidize into Sn4+ remain critical challenges, hindering device performance and stability. Herein, it is demonstrated that a multifunctional dual‐anion synergistic regulation strategy to fabricate high‐quality MA‐free Cs0.1FA0.9Pb0.5Sn0.5I3 perovskite thin films with superior morphology and crystallinity via a simplified antisolvent‐free spin‐coating process. Acetate anions (Ac−) derived from formamidinium acetate (FAAc) effectively regulate crystallization kinetics and mitigate Sn2+ oxidation via intermediate phase formation and anion exchange process. Simultaneously, the combination of Ac− and thiocyanate anions (SCN−) from guanidinium thiocyanate (GuaSCN) promotes larger crystal grain growth and stabilizes Sn2+ via strong coordination interactions. The dual‐anion strategy effectively minimizes grain boundaries, suppresses non‐radiative recombination, and optimizes the energy level alignment at interfaces. As a result, the champion single‐junction Sn‐Pb perovskite solar cell (PSC) achieves an impressive power conversion efficiency (PCE) of 23.26%, setting a new benchmark for Sn‐Pb PSCs fabricated without antisolvent. While all‐perovskite TSCs reach 28.07% efficiency with remarkable operational stability, retaining 81% of initial performance after 600 h under maximum power point tracking.
Article Details
Authors (19)
Chen Zhang
Shenzhen Institute for Quantum Science and Engineering, Department of Chemistry, and Department of Physics
Zhelu Hu
Jinpei Wang
Jianbin Zhu
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University Nanjing 211816 China
Zhangquan Hu
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University Nanjing 211816 China
Wenxiu Dang
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University Nanjing China
Chunyu Guo
Qiushi Li
State Key Laboratory of Superhard Materials, College of Physics, Jilin University
Jinxian Yang
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University Nanjing 211816 China
Bing Zhang
Xueqin Ran
Ping Li
Qingxun Guo
Lingfeng Chao
Yingdong Xia
Lionel Aigouy
Laboratoire de Physique et d’Etude des Matériaux (LPEM), CNRS, ESPCI Paris, PSL Research University, Sorbonne Université 1 , 10 rue Vauquelin, Paris F-75231,
Zhuoying Chen
Laboratoire de Physique et d’Etude des Matériaux (LPEM), CNRS, ESPCI Paris, PSL Research University, Sorbonne Université 1 , 10 rue Vauquelin, Paris F-75231,
Yonghua Chen
Wei Huang