Atomical‐Rippled‐Nanodomains Stabilized Large Polarization in BiSmCo <sub>2</sub> O <sub>6</sub> Double‐Perovskite Films

J Jie Tu D Dongxing Zheng (Physical Science and Engineering Division (PSE)) X Xudong Liu (Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM)) H Hangren Li Y Yonghui Wu S Siyuan Du J Jiaqi Ding X Xiuqiao Liu M Menglin Li (Frontiers Science Center for New Organic Matter, State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), State Key Laboratory of Elemonto-organic Chemistry, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Academy of Advanced Interdisciplinary Studies, College of Chemistry) Q Qingxiao Wang (Imaging and Characterization Core Lab) X Xiaoming Shi (Department of Physics) X Xixiang Zhang (Material Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia.) J Jianjun Tian L Linxing Zhang (College of Chemistry and Chemical Engineering)

Abstract

Abstract Double‐perovskite ferroelectrics have attracted increasing attention due to their highly tunable structures, multifunctional coupling effects, and potential applications in next‐generation nonvolatile ferroelectric semiconductor devices. Here, an atomical‐rippled‐nanodomains (ARNs) are introduced to BiCoO 3 and SmCoO 3 solid solution double‐perovskite film due to its ferroelectric single‐domain coupling. By engineering triaxial tensile strain, the ferroelectric ARNs are robustly formed in BiSmCo 2 O 6 double‐perovskite films, leading to a large ferroelectric polarization (≈23.1 µC cm −2 ) and ultra‐enduring ferroelectric fatigue resistance exceeding 10 12 cycles without degradation. These results represent a significant enhancement in the performance boundaries of orthorhombic type‐II multiferroics. The ferroelectric switching dynamics reveal the intrinsic correlation between the continuous switchable ARNs and the outstanding ferroelectric behavior. These findings underscore the effectiveness of nanodomain‐coupling strategy for realizing high‐performance ferroelectrics and offer a promising pathway toward designing correlated oxide‐based ferroelectric semiconductor devices with exotic functionalities.

Article Details

Volume / Issue Vol. 37, Issue 45
Published November 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

J

Jie Tu

D

Dongxing Zheng

Physical Science and Engineering Division (PSE)

X

Xudong Liu

Department of Chemistry, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM)

H

Hangren Li

Y

Yonghui Wu

S

Siyuan Du

J

Jiaqi Ding

X

Xiuqiao Liu

M

Menglin Li

Frontiers Science Center for New Organic Matter, State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), State Key Laboratory of Elemonto-organic Chemistry, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Academy of Advanced Interdisciplinary Studies, College of Chemistry

Q

Qingxiao Wang

Imaging and Characterization Core Lab

X

Xiaoming Shi

Department of Physics

X

Xixiang Zhang

Material Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia.

J

Jianjun Tian

L

Linxing Zhang

College of Chemistry and Chemical Engineering