Bifacially Reinforced Self‐Assembled Monolayer Interfaces for Minimized Recombination Loss and Enhanced Stability in Perovskite/Silicon Tandem Solar Cells
Abstract
Abstract Perovskite/silicon tandem solar cells have shown higher power conversion efficiencies (PCEs) than single‐junction cells. However, their record PCE still falls short of the theoretical maximum, and their stability is significantly lower than that of crystalline silicon solar cells. These challenges stem from the substantial losses in open‐circuit voltage ( V OC ) and the instability of wide‐bandgap perovskite devices, which are mainly caused by nonradiative recombination and degradation at the heterojunction interfaces, respectively. Specifically, the weak adhesion between indium tin oxide (ITO) and self‐assembled monolayers (SAMs), along with inadequate interactions between the SAMs and the perovskite, contributes to this instability. Herein, a novel SAM material, 4‐(11H‐benzo[a]carbazol‐11‐yl)butyl (4‐PhCz), has been developed to bifacially reinforce interfaces by enhancing SAM coverage on ITO and strengthening the interactions between SAM and perovskites. The resulting 1.67 eV perovskite solar cell (PSCs) achieves a V OC of 1.273 V with a low voltage loss of 0.397 V relative to the bandgap and a PCE of 22.53%. The 4‐PhCz‐based perovskite/silicon tandem cell achieves a V OC of 1.96 V and a PCE of 31.26%, retaining 92% of its initial efficiency after 1000 h of maximum power point tracking (MPPT) under 1‐sun illumination in a nitrogen atmosphere at 25 °C.
Article Details
Authors (20)
Chang Guo
Hefei National Laboratory for Physical Sciences at the Microscale and Department of Chemistry
Hong‐Qiang Du
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 P. R. China
Yu‐Chen Wang
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing & Nanostructure Research Centre (NRC) Wuhan University of Technology Wuhan China
Xiang Gao
Yu‐Qi Lan
International School of Materials Science and Engineering (School of Materials and Microelectronics) Wuhan University of Technology Wuhan 430070 P. R. China
Yu‐Song Xiao
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing & Nanostructure Research Centre (NRC) Wuhan University of Technology Wuhan China
Wei Jiang
Yi‐Chen Zhou
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 P. R. China
Qi‐Bo Yuan
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing & Nanostructure Research Centre (NRC) Wuhan University of Technology Wuhan China
Zi‐Yue Qiang
State Power Investment Corporation Research Institute Beijing 102209 People's Republic of China
Ji‐Hong Zheng
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing & Nanostructure Research Centre (NRC) Wuhan University of Technology Wuhan China
Long‐Hui Yang
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 P. R. China
Cai‐Xia Wang
State Power Investment Corporation Research Institute Beijing 102209 People's Republic of China
Ning Yang
State Key Laboratory of Physical Chemistry of Solid Surfaces, Key Laboratory of Chemical Biology of Fujian Province, and College of Chemistry and Chemical Engineering
Rui Lin
Gui‐Jie Liang
Hubei Key Laboratory of Low‐Dimensional Optoelectronic Materials and Devices Hubei University of Arts and Science Xiangyang 441053 China
Mathias Uller Rothmann
Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory Xianhu Hydrogen Valley Foshan 528200 P. R. China
Xinhua Ouyang
Yi‐Bing Cheng
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 P.R. China
Wei Li