Bio‐Resorbable Magnetic Tunnel Junctions

D Dong‐Jun Kim (Department of Electrical and Computer Engineering National University of Singapore Singapore 117583 Singapore) B Beom Jin Kim H Heechang Shin (School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea) J Jeongkeun Kim (School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea) Y Yuchen Pu (Department of Electrical and Computer Engineering, National University of Singapore 1 , Singapore 117583,) S Shuhan Yang X Xinhou Chen (Department of Electrical and Computer Engineering National University of Singapore Singapore Singapore) B Byong‐Guk Park (Department of Materials Science and Engineering KAIST Daejeon Republic of Korea) J Jong‐Hyun Ahn (School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea) H Hyunsoo Yang

Abstract

Abstract Magnetic tunnel junctions (MTJs) play a crucial role in spintronic applications, particularly data storage and sensors. Especially as a non‐volatile memory, MTJs has received substantial attention due to its CMOS compatibility, low power consumption, fast switching speed, and high endurance. In parallel, bio‐resorbable electronics have emerged as a promising solution for systems requiring temporary operation and secure data disposal, especially in military, intelligence, and biomedical systems where devices must safely disintegrate under physiological conditions. In this study, the bio‐resorbability of MTJ is investigated by analyzing the dissolution behavior of its nanometer‐thick constituent layers in phosphate‐buffered saline solution at pH 7.4, simulating physiological environments. The MTJ structures, composed of bio‐resorbable materials, exhibit well‐controlled degradation behaviors. Critically, as one of the ferromagnetic layers dissolves, binary information is irreversibly lost, within 10 h of immersion. These findings highlight the potential of MTJs not only as high‐performance memory elements but also as secure, transient data storage platforms. The ability to modify the dissolution lifetime by materials and thickness selection offers unique advantages for short‐lived implantable devices, paving the way for integrating spintronic functionality into next‐generation bioresorbable electronics.

Article Details

Volume / Issue Vol. 37, Issue 50
Published December 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

D

Dong‐Jun Kim

Department of Electrical and Computer Engineering National University of Singapore Singapore 117583 Singapore

B

Beom Jin Kim

H

Heechang Shin

School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea

J

Jeongkeun Kim

School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea

Y

Yuchen Pu

Department of Electrical and Computer Engineering, National University of Singapore 1 , Singapore 117583,

S

Shuhan Yang

X

Xinhou Chen

Department of Electrical and Computer Engineering National University of Singapore Singapore Singapore

B

Byong‐Guk Park

Department of Materials Science and Engineering KAIST Daejeon Republic of Korea

J

Jong‐Hyun Ahn

School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea

H

Hyunsoo Yang