Bio‐Resorbable Magnetic Tunnel Junctions
Abstract
Abstract Magnetic tunnel junctions (MTJs) play a crucial role in spintronic applications, particularly data storage and sensors. Especially as a non‐volatile memory, MTJs has received substantial attention due to its CMOS compatibility, low power consumption, fast switching speed, and high endurance. In parallel, bio‐resorbable electronics have emerged as a promising solution for systems requiring temporary operation and secure data disposal, especially in military, intelligence, and biomedical systems where devices must safely disintegrate under physiological conditions. In this study, the bio‐resorbability of MTJ is investigated by analyzing the dissolution behavior of its nanometer‐thick constituent layers in phosphate‐buffered saline solution at pH 7.4, simulating physiological environments. The MTJ structures, composed of bio‐resorbable materials, exhibit well‐controlled degradation behaviors. Critically, as one of the ferromagnetic layers dissolves, binary information is irreversibly lost, within 10 h of immersion. These findings highlight the potential of MTJs not only as high‐performance memory elements but also as secure, transient data storage platforms. The ability to modify the dissolution lifetime by materials and thickness selection offers unique advantages for short‐lived implantable devices, paving the way for integrating spintronic functionality into next‐generation bioresorbable electronics.
Article Details
Authors (10)
Dong‐Jun Kim
Department of Electrical and Computer Engineering National University of Singapore Singapore 117583 Singapore
Beom Jin Kim
Heechang Shin
School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea
Jeongkeun Kim
School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea
Yuchen Pu
Department of Electrical and Computer Engineering, National University of Singapore 1 , Singapore 117583,
Shuhan Yang
Xinhou Chen
Department of Electrical and Computer Engineering National University of Singapore Singapore Singapore
Byong‐Guk Park
Department of Materials Science and Engineering KAIST Daejeon Republic of Korea
Jong‐Hyun Ahn
School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea
Hyunsoo Yang