Bisphosphonate‐Embedded a π‐Conjugated Passivator Enable Efficient and Stable <i>n‐i‐p</i> Perovskite Solar Cells with Low‐Polarity Solvent Processing
Abstract
Abstract Interface passivators play a critical role in improving the efficiency of perovskite solar cells (PSCs). However, the conventional passivators often require processing in high‐polarity solvents that can cause additional surface defects on the perovskite film, thereby reducing the efficiency and stability of n‐i‐p PSCs. Herein, a bisphosphate molecule (named DCTP) is designed and synthesized to simultaneously address solvent compatibility, defect passivation, and hole extraction. DCTP has good solubility in low‐polarity solvents such as toluene, chlorobenzene, and chloroform without damaging the perovskite surface. The chlorobenzene‐processed DCTP interlayer can sufficiently passivate the defects on the perovskite surface and improve the energy level arrangement at the perovskite/hole transporting layer interface. Meanwhile, the DCTP layer effectively inhibits interlayer diffusion of formamidine (FA + ), iodide (I − ), and lithium (Li + ) and ions under thermal stress. As a result, the DCTP‐controlled device produces a champion power conversion efficiency (PCE) of 26.07% with excellent reproducibility, compared to 24.28% for the reference device. More importantly, the operational stability of the device is significantly improved. The DCTP‐treated device retains 90.1% of its initial PCE after 900 h of maximum power point tracking (MPPT) at 65 °C under the ISOS‐L‐2I protocol.
Article Details
Authors (13)
Xiaochun Liao
Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. China
Yueli Liu
State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Department of Physics Peking University Beijing 100871 P. R. China
Xinyue Cao
Materdicine Lab, School of Life Sciences, Shanghai University, 200444 Shanghai, P. R. China
Jie Wu
Tongqiang Liu
Zhejiang Engineering Research Centre for Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China
Pengfei Ding
Jialei Liu
Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. China
Qiaoling Zuo
Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. China
He Sun
Bo Qu
Lixin Xiao
Daobin Yang
Zhejiang Engineering Research Centre for Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China
Ziyi Ge