B─O‐Bond‐Mediated π‐Extension Enables Concurrent High Efficiency and Spectral Purity Toward BT.2020‐Standard Deep‐Blue MR‐TADF OLEDs

Z Zeyuan Ye Z Zhenghao Zhang (Center for X-Mechanics, Department of Engineering Mechanics, Zhejiang University) X Xiaoling Xu (Zhejiang Key Laboratory of Medical Epigenetics, Department of Biochemistry and Molecular Biology, School of Basic Medical Sciences, Hangzhou Normal University) X Xiaosong Cao (Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering) S Shaolong Gong (College of Chemistry and Molecular Sciences Hubei Key Lab On Organic and Polymeric Optoelectronic Materials Wuhan University Wuhan P. R. China) J Jiacheng Ma (State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter) J Jiahui Liu Z Zhuixing Xue (Shenzhen Key Laboratory of New Information Display and Storage Materials College of Materials Science and Engineering Shenzhen University Shenzhen P. R. China) R Rongrong Li Z Zhanxiang Chen (Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering) X Xiaojun Yin (Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering) J Jingsheng Miao (Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering) C Cheng Zhong C Chuluo Yang (Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering)

Abstract

ABSTRACT Deep‐blue multi‐resonance thermally activated delayed fluorescence (MR‐TADF) emitters are crucial for next‐generation ultra‐high‐definition OLED displays, yet the concurrent realization of high color purity, high quantum efficiency, and a fast reverse intersystem crossing (RISC) rate remains elusive. Here, we present a B─O–bond‐mediated π‐extension design that harmonizes these conflicting performance metrics. In this approach, π‐extension effectively narrows the emission bandwidth and reduces the singlet–triplet energy gap (Δ E ST ), while the incorporation of B─O bond mitigates the bathochromic shift typically induced by π‐extension, thereby preserving high emission energy. The resulting doubly and triply borylated emitters, accessible via a lithium‐free one‐shot borylation on a gram scale, exhibit deep‐blue emissions with nearly BT.2020 chromaticity, close‐to‐unity quantum yields, and an order‐of‐magnitude enhancements in their RISC rate constants relative to the parent emitter. Correspondingly, the non‐sensitized OLEDs deliver maximum external quantum efficiencies (EQE max ) of up to 34.7%, blue index values of up to 394, and mitigated efficiency roll‐off. Meanwhile, in a more stable device configuration, LT 90 lifetimes (time to decay to 90% of the initial luminance) of up to 114.6 h at 500 cd m −2 are achieved. This work establishes a molecular design paradigm for constructing efficient, spectrally pure, and durable deep‐blue MR‐TADF emitters, advancing the pathway toward next‐generation display technologies.

Article Details

Volume / Issue Vol. 1, Issue 1
Published January 28, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

Z

Zeyuan Ye

Z

Zhenghao Zhang

Center for X-Mechanics, Department of Engineering Mechanics, Zhejiang University

X

Xiaoling Xu

Zhejiang Key Laboratory of Medical Epigenetics, Department of Biochemistry and Molecular Biology, School of Basic Medical Sciences, Hangzhou Normal University

X

Xiaosong Cao

Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering

S

Shaolong Gong

College of Chemistry and Molecular Sciences Hubei Key Lab On Organic and Polymeric Optoelectronic Materials Wuhan University Wuhan P. R. China

J

Jiacheng Ma

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter

J

Jiahui Liu

Z

Zhuixing Xue

Shenzhen Key Laboratory of New Information Display and Storage Materials College of Materials Science and Engineering Shenzhen University Shenzhen P. R. China

R

Rongrong Li

Z

Zhanxiang Chen

Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering

X

Xiaojun Yin

Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering

J

Jingsheng Miao

Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering

C

Cheng Zhong

C

Chuluo Yang

Shenzhen Key Laboratory of New Information Display and Storage Materials, College of Materials Science and Engineering