Building a Highly Stable Red/Near Infrared Afterglow Library with Highly Branched Structures

M Meng Wang X Xiuxing Liu (Hubei Key Lab on Organic and Polymeric Opto‐Electronic Materials Department of Chemistry Wuhan University Wuhan 430072 China) W Wentao Yuan (Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering) Y Yujie Yang (Key Laboratory of Colloid and Interface Chemistry of the Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University) C Cheng Zhong B Boxi Wu (Hubei Key Lab on Organic and Polymeric Opto‐Electronic Materials Department of Chemistry Wuhan University Wuhan 430072 China) Z Zhen Li Q Qianqian Li

Abstract

AbstractAchieving organic red/near infrared (NIR) phosphorescence at high temperatures is theoretically challenging because of the severe nonradiative transitions of excited triplet states with low energy gaps. This study realizes bright and persistent red/NIR afterglow with excellent high‐temperature resistance up to 413 K via highly efficient (≈100%) phosphorescence resonance energy transfer (PRET) from rationally designed branched phosphorescence luminogens as energy donors to red/NIR dyes as acceptors, coupled with optimized aggregated structures. According to systematic investigations, the abundant internal cavities formed by the highly branched luminogens in solid states ensure dye loading and space limitation, which can considerably suppress nonradiative transitions at high temperatures, promoting a persistent red/NIR afterglow with excellent stability. Moreover, 16 types of host–guest systems with varied topological structures of branched luminogens and different red/NIR dyes of various sizes confirm the universality of the strategy. This study provides an efficient approach to achieve a highly stable red/NIR afterglow.

Article Details

Volume / Issue Vol. 37, Issue 10
Published March 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

M

Meng Wang

X

Xiuxing Liu

Hubei Key Lab on Organic and Polymeric Opto‐Electronic Materials Department of Chemistry Wuhan University Wuhan 430072 China

W

Wentao Yuan

Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering

Y

Yujie Yang

Key Laboratory of Colloid and Interface Chemistry of the Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University

C

Cheng Zhong

B

Boxi Wu

Hubei Key Lab on Organic and Polymeric Opto‐Electronic Materials Department of Chemistry Wuhan University Wuhan 430072 China

Z

Zhen Li

Q

Qianqian Li