Close‐to‐Equilibrium Crystallization for Large‐Scale and High‐Quality Perovskite Single Crystals

H Hang Yin M Mingquan Liao Y Yuanpeng Shi (Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China) Z Zhiqiang Liu H Hanchen Li S Song He Z Zhiping Zheng (State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, Department of Chemistry, College of Chemistry and Chemical Engineering) L Ling Xu J Jiang Tang (Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information) G Guangda Niu (Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Optical Valley Laboratory)

Abstract

Abstract The growth of large semiconductor crystals is crucial for advancing modern electronics and optoelectronics. While various crystal growth techniques have been developed for lead halide perovskites, a significant challenge remains: as crystal size increases, performance tends to deteriorate dramatically. This study addresses the inherent limitations of perovskite crystal growth by designing a novel strategy for near‐equilibrium growth system to maintain optimal conditions throughout the process. The system consists of three independent units: a solution supply unit, a crystal growth unit, and a solution recycling unit, which together ensure a constant solution concentration and temperature. By systematically optimizing temperature control and solution feeding rates, large and high‐quality FAPbBr 3 single crystals, including a notable crystal measuring 51 × 45 × 10 mm 3 are successfully produced. This crystal demonstrates a mobility‐lifetime product of 2.83 × 10⁻ 2 cm 2 V⁻¹ and an ultralow detection limit of 319.22 pGy air , significantly surpassing existing perovskite crystals of similar size. The approach can serve as a universal platform for the controlled synthesis of all kinds of perovskite single crystals, laying the foundations for their use in various optoelectronic applications.

Article Details

Volume / Issue Vol. 37, Issue 10
Published March 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

H

Hang Yin

M

Mingquan Liao

Y

Yuanpeng Shi

Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China

Z

Zhiqiang Liu

H

Hanchen Li

S

Song He

Z

Zhiping Zheng

State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, Department of Chemistry, College of Chemistry and Chemical Engineering

L

Ling Xu

J

Jiang Tang

Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information

G

Guangda Niu

Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Optical Valley Laboratory