Control Over Metal‐Halide Reactivity Enables Uniform Growth of InSb Colloidal Quantum Dots for Enhanced SWIR Light Detection

M Muhammad Imran D Da Bin Kim (Department of Electrical and Computer Engineering University of Toronto 10 King's College Road Toronto Ontario M5S 3G4 Canada) P Pan Xia F Francisco Yarur Villanueva (Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy) B Benjamin Rehl J Joao M. Pina (Department of Electrical and Computer Engineering University of Toronto 10 King's College Road Toronto ON M5S 3G4 Canada) Y Yanjiang Liu (Department of Electrical and Computer Engineering University of Toronto 10 King's College Road Toronto Ontario M5S 3G4 Canada) Y Yangning Zhang (School of Biomedical Sciences and Engineering, Guangzhou International Campus) O Oleksandr Voznyy E Eugenia Kumacheva S Sjoerd Hoogland (The Alliance for AI-Accelerated Materials Discovery (A3MD)) E Edward H. Sargent

Abstract

AbstractInSb colloidal quantum dots (CQDs) hold promise in short‐wave infrared sensing; however, their synthesis presents ongoing challenges, particularly in achieving precise size control – this is the result of poorly controlled reactivity among the precursors. Herein, the use of alkyl‐phosphine and amine‐based organic additives to control the reactivity of In and Sb precursors during the nucleation and growth of CQDs is developed. This interplay between organic additive and precursors enables the synthesis of InSb CQDs having narrowed size distributions; and bandgaps tunable across the 1.2–1.5 µm spectral range; all this leading to peak‐to‐valley ratios >1.4 in absorption spectra. The CQDs are surface‐terminated with a mixture of oleylamine, halides, and oxide‐like species, and this hinders ligand exchange reactions and subsequent integration into photodiodes. We therefore resurface the CQDs with alkanethiols, displacing the native ligands via an acid‐base mechanism, an approach that removes oxide species. Using a layer‐by‐layer fabrication process, the ligands of the resurfaced InSb CQDs are exchanged with short organic and halide ligands and incorporated films into n‐i‐p photodiode structures. The resultant devices exhibit a detectivity of 10¹2 Jones, an external quantum efficiency (EQE) of 33% at 1380 nm, and T90 operating stability of >19 h under continuous illuminated operation.

Article Details

Volume / Issue Vol. 37, Issue 12
Published March 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

M

Muhammad Imran

D

Da Bin Kim

Department of Electrical and Computer Engineering University of Toronto 10 King's College Road Toronto Ontario M5S 3G4 Canada

P

Pan Xia

F

Francisco Yarur Villanueva

Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy

B

Benjamin Rehl

J

Joao M. Pina

Department of Electrical and Computer Engineering University of Toronto 10 King's College Road Toronto ON M5S 3G4 Canada

Y

Yanjiang Liu

Department of Electrical and Computer Engineering University of Toronto 10 King's College Road Toronto Ontario M5S 3G4 Canada

Y

Yangning Zhang

School of Biomedical Sciences and Engineering, Guangzhou International Campus

O

Oleksandr Voznyy

E

Eugenia Kumacheva

S

Sjoerd Hoogland

The Alliance for AI-Accelerated Materials Discovery (A3MD)

E

Edward H. Sargent