Cryogenic Thermoelectric Enhancement by Nonparabolic Band‐Edge Transport in Bi <sub>2</sub> Te <sub>3</sub>

X Xuemei Wang S Shuxian Zhang (State Key Laboratory of Applied Organic Chemistry, Key Laboratory of Special Function Materials and Structure Design, College of Chemistry and Chemical Engineering) Z Zhiwei Chen X Xinyue Zhang M Minghao Xue (Interdisciplinary Materials Research Center School of Materials Science and Engineering Tongji Univ. Shanghai China) H Han Zhao W Wen Li Z Zhijian Yin (Advanced Coatings &amp; New Materials Research Center Shanghai Shefei Surface Technology Co., Ltd. National University Science Park of Shanghai University of Electric Power Shanghai China) J Jun Luo Y Yanzhong Pei (Interdisciplinary Materials Research Center School of Materials Science and Engineering Tongji Univ. Shanghai China)

Abstract

ABSTRACT Selective scattering of electrons near the Fermi level is the kinetic origin of the thermoelectric effect. Pronounced band nonparabolicity near the band edge is expected to promote the decoupling of a high Seebeck coefficient from high electrical conductivity; however, accessing this band‐edge transport regime at low temperatures remains challenging, as defect‐dominated scattering often masks the intrinsic band‐structure effects. Here, we experimentally show that single‐crystalline Bi 2 Te 3 can access a reduced‐scattering band‐edge transport regime in which the transport distribution becomes strongly energy dependent, enabling simultaneously a sizable thermopower and a high carrier mobility at cryogenic temperatures. This approach yields a record thermoelectric power factor of three times as high as that of conventional parabolic band‐dominated Bi 2 Te 3 . Quantum oscillation measurements reveal multiband transport components consistent with the band‐structure complexity of Bi 2 Te 3 , and magneto‐thermal conductivity measurements indicate a reduced Lorenz factor and suppressed electronic thermal conductivity in the same regime. The resultant over 600% thermoelectric enhancement in conventional Bi 2 Te 3 demonstrates a practical strategy of advancement by engineering band‐edge transport in strong spin–orbit coupled materials.

Article Details

Volume / Issue Vol. 1, Issue 1
Published August 12, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

X

Xuemei Wang

S

Shuxian Zhang

State Key Laboratory of Applied Organic Chemistry, Key Laboratory of Special Function Materials and Structure Design, College of Chemistry and Chemical Engineering

Z

Zhiwei Chen

X

Xinyue Zhang

M

Minghao Xue

Interdisciplinary Materials Research Center School of Materials Science and Engineering Tongji Univ. Shanghai China

H

Han Zhao

W

Wen Li

Z

Zhijian Yin

Advanced Coatings &amp; New Materials Research Center Shanghai Shefei Surface Technology Co., Ltd. National University Science Park of Shanghai University of Electric Power Shanghai China

J

Jun Luo

Y

Yanzhong Pei

Interdisciplinary Materials Research Center School of Materials Science and Engineering Tongji Univ. Shanghai China