D‐Band Width Rationally Broadened by Configuring Nearest Coordination of Metal Site for Enhanced Active Site‐Intermediate Interaction

J Jing Li X Xiaotao Zhang (Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China) J Jinpeng Li X Xiaoyu Zheng M Minghui Li J Jiadong Zhou E Erhong Song (Center of Materials Science and Optoelectronics Engineering) Y Yao Zhou

Abstract

Abstract Metal‐based site, as an important type of active site, plays the benchmarking role in the redox and charge transfer processes in the heterogeneous catalysis. Modulating the valence state of metal site as a promising and simple strategy theoretically enables control over the adsorption strength of reaction intermediates. However, this strategy is intrinsically limited by the local atomic configuration, often leading to unpredictable catalytic failures. Here, it is reported that the intermediate adsorption strength of platinum active site with different valence states exhibits a linear relationship with the d‐band width of Pt (W d ‐Pt ). Adjusting the nearest‐neighbor coordination environment of Pt sites by changing the transition metals bonded to Pt effectively modulates the W d ‐Pt , which offers a high activity (η 10 = 14 mV) in the hydrogen evolution reaction (HER). W d ‐Pt broadening elevates the Pt─H anti‐bonding states across the Fermi level, strengthening active site‐absorbate interactions and thereby tuning HER catalytic activity. In addition, this d‐band width engineering strategy can be expanded to other catalysts with the metal active site. The present study transcends limitations in valence state modulation and sheds light on deeper understanding of d‐band structure of metal sites and a methodology to boost the activity of metal sites in heterogeneous catalysis.

Article Details

Volume / Issue Vol. 38, Issue 3
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

J

Jing Li

X

Xiaotao Zhang

Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China

J

Jinpeng Li

X

Xiaoyu Zheng

M

Minghui Li

J

Jiadong Zhou

E

Erhong Song

Center of Materials Science and Optoelectronics Engineering

Y

Yao Zhou