Deciphering the Purification Additive Chemistries for Ultra‐Stable High‐Voltage Lithium‐Ion Batteries

S Sen Jiang (State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering) R Ruhong Li (State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering) L Long Chen (Department of Chemistry, Frontiers Science Center for New Organic Matter and State Key Laboratory of Advanced Chemical Power Sources, College of Chemistry) C Chuangchao Sun (College of Materials Science and Engineering Zhejiang University of Technology Hangzhou 310014 China) J Jinze Wang (State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering) J Jiale Zheng (State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310058 China) L Lixin Chen (State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering) T Tao Deng (China-UK Low Carbon College) X Xiulin Fan (State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering)

Abstract

Abstract Hydrogen fluoride (HF)‐induced degradation of electrode materials and interphases presents a significant challenge for high‐voltage Li‐ion batteries. However, progress in developing advanced HF‐scavenging additives is hindered by a limited understanding of HF‐elimination reactions and the absence of a robust design principle. Herein, it is proposed to analyze the energy decomposition analysis of 24 additives to elucidate the underlying HF‐scavenging mechanism and identify key factors influencing HF‐additives reactions. The findings reveal that orbital contribution ratio (OCR) is a critical determinant of chemical bonding in HF‐additive reactions. Specifically, an 80% OCR for H + and a 53% OCR for F − are essential for completing HF elimination. Based on these insights, a general principle for designing effective HF‐elimination additives is proposed and heptamethyldisilazane as a particularly well‐suited candidate, exhibiting optimal OCR for both H + and F − ions is identified. Remarkably, the addition of just 1 wt.% HMDS significantly eliminats HF, inhibiting cathode‐to‐anode crosstalk behaviors and limiting electrode and interphase degradation. This guardian endows graphite/LiNi 0.8 Co 0.1 Mn 0.1 O 2 pouch cells with a significant performance improvement, achieving 80% capacity retention over 2528 cycles, a substantial improvement compared to the 1139 cycles observed without HF‐elimination additive. The study provides valuable insights for the design of advanced electrolyte additives for high‐performance Li‐ion batteries.

Article Details

Volume / Issue Vol. 37, Issue 15
Published April 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (9)

S

Sen Jiang

State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering

R

Ruhong Li

State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering

L

Long Chen

Department of Chemistry, Frontiers Science Center for New Organic Matter and State Key Laboratory of Advanced Chemical Power Sources, College of Chemistry

C

Chuangchao Sun

College of Materials Science and Engineering Zhejiang University of Technology Hangzhou 310014 China

J

Jinze Wang

State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering

J

Jiale Zheng

State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310058 China

L

Lixin Chen

State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering

T

Tao Deng

China-UK Low Carbon College

X

Xiulin Fan

State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering