Deterministic Switching of Antipolar Variants in Antiferroelectric Membranes

Y Yi‐De Liou (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) S Shih‐Chao Chang (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) H Hong‐Ren Wang (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) P Puneet Kaur S Shin‐Hong Chen (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) B Bo‐Cia Chen (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) Y Yong‐Jyun Wang (Department of Materials Science and Engineering National Tsing Hua University Hsinchu 300044 Taiwan) L Le Thi Quynh (Department of Materials Science and Engineering National Tsing Hua University Hsinchu 300044 Taiwan) Y Yen‐Lin Huang (Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu 300093 Taiwan) Y Ye Cao Y Yi‐Chun Chen (Department of Physics National Cheng Kung University Tainan 70101 Taiwan) Z Zheng Liu Y Ying‐Hao Chu (Department of Materials Science and Engineering National Tsing Hua University Hsinchu 300044 Taiwan) Y Yung‐Chang Lin (Research Institute of Core Technology for Materials Innovation National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305‐8565 Japan) K Kazu Suenaga (SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka, Japan.) J Jan‐Chi Yang (Department of Physics National Cheng Kung University Tainan Taiwan)

Abstract

Abstract Antiferroelectric (AFE) materials, characterized by their antiparallel dipole alignments, offer distinct ferroic functionalities desirable for high‐energy‐density storage and next‐generation low‐power electronic devices. However, the intrinsic degeneracy among antipolar domain variants poses a critical obstacle to their deterministic, nonvolatile control and practical integration into functional architectures. Here, selective and reversible manipulation of AFE domain configurations in freestanding PbZrO 3 membranes via electron beam irradiation are demonstrated. By tailoring the electron beam–induced built‐in electric field, controlled writing and erasure of both in‐plane and out‐of‐plane antipolar domain variants are enabled. Complementary phase‐field simulations uncover the underlying energetic landscape and domain evolution under varying irradiation conditions, offering mechanistic insight into the observed transformations. These findings demonstrate a promising strategy for domain‐level engineering of antiferroelectrics, establishing a generic and programmable approach to deterministically control antipolar ordering in perovskite systems—suggesting a pathway toward controlled, reversible switching of AFE domains in nanoscale oxide architectures.

Article Details

Volume / Issue Vol. 38, Issue 7
Published February 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (16)

Y

Yi‐De Liou

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

S

Shih‐Chao Chang

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

H

Hong‐Ren Wang

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

P

Puneet Kaur

S

Shin‐Hong Chen

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

B

Bo‐Cia Chen

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

Y

Yong‐Jyun Wang

Department of Materials Science and Engineering National Tsing Hua University Hsinchu 300044 Taiwan

L

Le Thi Quynh

Department of Materials Science and Engineering National Tsing Hua University Hsinchu 300044 Taiwan

Y

Yen‐Lin Huang

Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu 300093 Taiwan

Y

Ye Cao

Y

Yi‐Chun Chen

Department of Physics National Cheng Kung University Tainan 70101 Taiwan

Z

Zheng Liu

Y

Ying‐Hao Chu

Department of Materials Science and Engineering National Tsing Hua University Hsinchu 300044 Taiwan

Y

Yung‐Chang Lin

Research Institute of Core Technology for Materials Innovation National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305‐8565 Japan

K

Kazu Suenaga

SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka, Japan.

J

Jan‐Chi Yang

Department of Physics National Cheng Kung University Tainan Taiwan