Directed Regulation of Intermolecular Excitonic Couplings to Minimize Non‐Radiative Recombination of Excited States in NIR‐Absorbing Non‐Fullerene Acceptors
Abstract
ABSTRACT Suppression of excited‐state non‐radiative recombination is pivotal for overcoming efficiency bottleneck in organic optoelectronics. However, in film, mechanism of aggregates’ excited‐state non‐radiative recombination and how to suppress its rate ( k nr ) remain unclear. Here, taking classical Y6‐type acceptors as an example, we investigate how change in their molecular packing modes impacts aggregates’ excited‐state properties and k nr . We find that k nr decreases with an increased population of the compact EECC (end‐end and core‐core) packing mode. Our results reveal that the EECC mode enhances the electronic coupling between intermolecular charge‐transfer (iCT) and locally excited (LE) exciton states, facilitating aggregates’ excited‐state wavefunction delocalization and lowering the aggregates’ exciton‐phonon coupling, which compensates for the energy‐gap‐law effect. This intermolecular excitonic‐coupling regulation strategy is further supported in the L8BO series through an increased population of the EE packing mode and enhanced LE–LE excitonic coupling. The corresponding D18:L8BO:HDL8 ternary OPV devices achieved a high efficiency of 20.63% (certified as 20.40%) with reduced non‐radiative voltage loss (Δ V nr ). Our work has not only uncovered the underlying mechanism of how molecular packing mode impacts aggregates’ electronic structures and k nr , but also provided a molecule‐design strategy for improving NIR luminescent efficiencies/exciton lifetimes of films and OPV device efficiencies with reduced Δ V nr .
Article Details
Authors (16)
Tianchen Lu
Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, State Key Laboratory of Bioinspired interfacial Materials Science
Xin Zong
Elpiscience
Yiming Wang
Jinyang Yu
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering
Dinglong Feng
New Territories The Chinese University of Hong Kong Hong Kong SAR P. R. China
Yibo Kong
State Key Laboratory of Silicon Materials Department of Polymer Science and Engineering Zhejiang University Hangzhou P. R. China
Xinxin Xia
Le Mei
Weixiong Guo
Institute of Functional Nano & Soft Materials (FUNSOM) Soochow University Suzhou Jiangsu P. R. China
Yuxuan Zhu
Zaifei Ma
Xinhui Lu
Department of Physics
Haiming Zhu
Zhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, Department of Chemistry, Institute of Fundamental and Transdisciplinary Research
Jiajun Ren
Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University 1 , 100875 Beijing,
Lijian Zuo
Xian‐Kai Chen
Institute of Functional Nano and Soft Materials (FUNSOM) Soochow University Suzhou 215123 P.R. China