Discovery of D‐band Center Engineered Amorphous Cathode with Ultrahigh, Superfast, and Wide‐Temperature Zn <sup>2+</sup> Storage Capability

M Ming Yang J Jianhui Zhu (College of Chemistry and Environmental Engineering Shenzhen University Shenzhen China) M Mengnan Lai (College of Chemistry and Environmental Engineering Shenzhen University Shenzhen P. R. China) P Peiwei Chen (Division of Biology and Biological Engineering, California Institute of Technology) Y Yuru Lin (College of Chemistry and Environmental Engineering Shenzhen University Shenzhen 518060 China) G Guomin Li Q Qicheng Hu (College of Chemistry and Environmental Engineering Shenzhen University Shenzhen 518060 P. R. China) L Longjun He (College of Chemistry and Environmental Engineering Shenzhen University Shenzhen China) H Hongwei Mi Y Yanyi Wang D Dingtao Ma P Peixin Zhang (Zhejiang Key Laboratory of Intelligent Manufacturing for Functional Chemicals, College of Chemical and Biological Engineering)

Abstract

Abstract Developing high‐performance cathodes for aqueous Zn‐ion batteries (AZIBs) requires simultaneously achieving high capacity, fast kinetics, and wide‐temperature stability. Herein, a paradigm‐shifting approach rooted in d‐band center engineering with a high‐entropy amorphous structure (A‐HE‐VSe 2 ) host for Zn 2+ storage. This synergistic design, achieved by incorporating multiple transition metal elements (V, Ti, Cr, Nb, Ta) and creating an amorphous structure, critically redistributes the d‐band center. This electronic structure modulation fundamentally enhances intrinsic multi‐metal redox activity and optimizes Zn 2+ interactions. Simultaneously, the amorphous framework fortifies the host with abundant active sites and facilitates rapid ion transport. Consequently, the A‐HE‐VSe 2 cathode demonstrates a record‐breaking performance, including an ultrahigh capacity (426 mAh g −1 at 0.1 A g −1 ), superfast rate capability (217 mAh g −1 at 100 A g −1 ), and exceptional durability over 25 000 cycles. Moreover, such an electrode exhibits robust wide‐temperature adaptability. In‐depth mechanistic studies and DFT calculations reveal that the high‐entropy design not only promotes the zinc ion adsorption energy but also lowers the Zn 2+ diffusion barrier, all of which are driven by the finely‐tuned electronic structure. This work demonstrates that rationally engineering the electronic and atomic structure of amorphous hosts via high‐entropy design unlocks superfast, ultrahigh, and thermally stable Zn 2+ storage for next‐generation energy storage applications.

Article Details

Volume / Issue Vol. 38, Issue 21
Published April 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

M

Ming Yang

J

Jianhui Zhu

College of Chemistry and Environmental Engineering Shenzhen University Shenzhen China

M

Mengnan Lai

College of Chemistry and Environmental Engineering Shenzhen University Shenzhen P. R. China

P

Peiwei Chen

Division of Biology and Biological Engineering, California Institute of Technology

Y

Yuru Lin

College of Chemistry and Environmental Engineering Shenzhen University Shenzhen 518060 China

G

Guomin Li

Q

Qicheng Hu

College of Chemistry and Environmental Engineering Shenzhen University Shenzhen 518060 P. R. China

L

Longjun He

College of Chemistry and Environmental Engineering Shenzhen University Shenzhen China

H

Hongwei Mi

Y

Yanyi Wang

D

Dingtao Ma

P

Peixin Zhang

Zhejiang Key Laboratory of Intelligent Manufacturing for Functional Chemicals, College of Chemical and Biological Engineering