Electric‐Field‐Driven Reversal of Ferromagnetism in (110)‐Oriented, Single Phase, Multiferroic Co‐Substituted BiFeO <sub>3</sub> Thin Films

T Takuma Itoh (Materials and Structures Laboratory Institute of Integrated Research Institute of Science Tokyo Yokohama 226‐8501 Japan) K Kei Shigematsu (Materials and Structures Laboratory, Institute of Integrated Research) H Hena Das (Materials and Structures Laboratory, Institute of Integrated Research) P Peter Meisenheimer (Department of Materials Science and Engineering) K Kei Maeda (Materials and Structures Laboratory Institute of Integrated Research Institute of Science Tokyo Yokohama 226‐8501 Japan) K Koomok Lee (Materials and Structures Laboratory, Institute of Integrated Research) M Mahir Manna (Department of Physics Arizona State University Tempe AZ 85281 USA) S Surya Prakash Reddy (Materials Science and Engineering School for Engineering of Matter Transport and Energy Arizona State University Tempe AZ 85281 USA) S Sandhya Susarla (Materials Science and Engineering School for Engineering of Matter Transport and Energy Arizona State University Tempe AZ 85281 USA) P Paul Stevenson (Department of Physics) R Ramamoorthy Ramesh (Rice Advanced Materials Institute) M Masaki Azuma (Kanagawa Institute of Industrial Science and Technology, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan)

Abstract

Abstract While multiferroic materials are attractive systems for the promise of ultra‐low‐power‐consumption computational technologies, electric‐field‐induced magnetization reversal is a key challenge for realizing devices at scale. Though significant research efforts have been working toward the realization of a material which couples ferroelectricity and ferromagnetism, there are few, even composite, systems which are practical for device scale applications at room temperature. Co‐substituted multiferroic BiFe 0.9 Co 0.1 O 3 is a promising candidate system, due to coupled ferroelectricity and weak ferromagnetism at room temperature. Here, it is theoretically indicated that the ferroic orders in this material are statically coupled, where an in‐plane 109° ferroelectric switching event can result in the reversal of this out‐of‐plane component of magnetization, and the electric field‐induced magnetization reversal is experimentally observed. Such an in‐plane poling configuration is particularly desirable for device applications.

Article Details

Volume / Issue Vol. 37, Issue 29
Published July 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

T

Takuma Itoh

Materials and Structures Laboratory Institute of Integrated Research Institute of Science Tokyo Yokohama 226‐8501 Japan

K

Kei Shigematsu

Materials and Structures Laboratory, Institute of Integrated Research

H

Hena Das

Materials and Structures Laboratory, Institute of Integrated Research

P

Peter Meisenheimer

Department of Materials Science and Engineering

K

Kei Maeda

Materials and Structures Laboratory Institute of Integrated Research Institute of Science Tokyo Yokohama 226‐8501 Japan

K

Koomok Lee

Materials and Structures Laboratory, Institute of Integrated Research

M

Mahir Manna

Department of Physics Arizona State University Tempe AZ 85281 USA

S

Surya Prakash Reddy

Materials Science and Engineering School for Engineering of Matter Transport and Energy Arizona State University Tempe AZ 85281 USA

S

Sandhya Susarla

Materials Science and Engineering School for Engineering of Matter Transport and Energy Arizona State University Tempe AZ 85281 USA

P

Paul Stevenson

Department of Physics

R

Ramamoorthy Ramesh

Rice Advanced Materials Institute

M

Masaki Azuma

Kanagawa Institute of Industrial Science and Technology, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan