Evolution and Suppression of Spin Cycloid in Epitaxial BiFeO <sub>3</sub> Thin Films

M Maya Ramesh (Department of Materials Science and Engineering) X Xinyan Li S Shashank Ojha (Department of Materials Science and NanoEngineering Rice University Houston Texas USA) S Sajid Husain (Department of Materials Science and Engineering) X Xiangwei Guo B Benjamin Gregory (Department of Materials Science and Engineering Cornell University Ithaca New York USA) P Peter Meisenheimer (Department of Materials Science and Engineering) P Prabhat Kumar X Xianhao Lin M Morgan Congdon (Department of Materials Science and Engineering Cornell University Ithaca New York USA) A Andrej Singer (Department of Materials Science & Engineering) Z Zijian Hong L Lucas Caretta (Department of Physics) S Se Kwon Kim L Lane W. Martin (Rice Advanced Materials Institute) P Paul Stevenson (Department of Physics) Y Yimo Han (Department of Materials Science and Nano Engineering) Z Zhi Yao R Ramamoorthy Ramesh (Rice Advanced Materials Institute) D Darrell G. Schlom (Department of Materials Science and Engineering)

Abstract

ABSTRACT A systematic study of the effect of film thickness on the stability of the spin cycloid in BiFeO 3 grown epitaxially on TbScO 3 (110) substrates reveals a complex evolution of both the crystal and ferroelectric domain structures as well as the magnetic order. For films thicker than ∼5 nm, the structure remains rhombohedral, but the lattice mismatch is accommodated by the formation of 71° ferroelastic‐closure domains, rather than misfit dislocations, followed by the formation of 109° domains. For films ≲ 5 nm, a mixed‐phase coexistence of a polar, rhombohedral‐like ( R 3 c ) phase and an antipolar ( Pnma ) phase is observed. Scanning nitrogen‐vacancy magnetometry reveals a change in the propagation vector of the spin cycloid with thickness. It evolves from parallel to the ferroelectric domains for 50 nm thick samples and thicker and reorients to perpendicular to the ferroelectric domains for intermediate thicknesses, and vanishes for films ≲ 5 nm, which is reflected in macroscopic spin transport measurements and supported by the simulations. Ultimately, this work provides a deep understanding of the role of film thickness and electrostatic boundary conditions on the ferroelectric domain configuration and, therefore on the spin cycloid to design the device with electric field control antiferromagnetism.

Article Details

Volume / Issue Vol. 38, Issue 41
Published July 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (20)

M

Maya Ramesh

Department of Materials Science and Engineering

X

Xinyan Li

S

Shashank Ojha

Department of Materials Science and NanoEngineering Rice University Houston Texas USA

S

Sajid Husain

Department of Materials Science and Engineering

X

Xiangwei Guo

B

Benjamin Gregory

Department of Materials Science and Engineering Cornell University Ithaca New York USA

P

Peter Meisenheimer

Department of Materials Science and Engineering

P

Prabhat Kumar

X

Xianhao Lin

M

Morgan Congdon

Department of Materials Science and Engineering Cornell University Ithaca New York USA

A

Andrej Singer

Department of Materials Science & Engineering

Z

Zijian Hong

L

Lucas Caretta

Department of Physics

S

Se Kwon Kim

L

Lane W. Martin

Rice Advanced Materials Institute

P

Paul Stevenson

Department of Physics

Y

Yimo Han

Department of Materials Science and Nano Engineering

Z

Zhi Yao

R

Ramamoorthy Ramesh

Rice Advanced Materials Institute

D

Darrell G. Schlom

Department of Materials Science and Engineering