Ferroelectric Optical Memristors Enabled by Non‐Volatile Electro‐Optic Effect

Y Yiyang Wen (Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University 3 , Tianjin 300071,) Y Yilin Cao (Department of Chemistry, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, California 92037, United States) H Hongda Ren (Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education Faculty of Chemistry Northeast Normal University Changchun 130024 P.R. China) X Xiaona Du J Jiaxing Guo Z Zhenping Wu (State Key Laboratory of Information Photonics and Optical Communications & School of Physical Science and Technology, Beijing University of Posts and Telecommunications 3 , Beijing 100876,) W Weiwei Liu (College of Materials Science and Engineering, College of Environment, State Key Laboratory of Advanced Separation Membrane Materials, Zhejiang Key Laboratory of Low-carbon Control Technology for Industrial Pollution) J Jiangbing Du (State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Key Laboratory of Navigation and Location Services, Department of Electronic Engineering, Shanghai Jiao Tong University 4 , Shanghai 200240,) Y Yang Zhang

Abstract

Abstract Memristors enable non‐volatile memory and neuromorphic computing. Optical memristors are the fundamental element for programmable photonic integrated circuits due to their high‐bandwidth computing, low crosstalk, and minimal power consumption. Here, an optical memristor enabled by a non‐volatile electro‐optic (EO) effect, where refractive index modulation under zero field is realized by deliberate control of domain alignment in the ferroelectric material Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 (PMN‐PT) is proposed. The non‐volatile EO memristor is designed exclusively for the modulation of the optical phase without degrading the optical transparency, and it allows the support for deterministic and repeated non‐volatile multilevel EO states. A non‐volatile tunable waveplate composed of the optical memrisor for free‐space optics, which allows for deterministic multilevel, and non‐volatile phase shifts from 0 to π /2 is presented. The state switching rate of the memristor is less than 100 ms, with a switching energy consumption of 234 nJ, and the states can be retained for up to 12 h without requiring static power consumption. These results demonstrate a novel approach to fully realizing non‐volatile optical memristors, where only optical phase modulation is involved, providing unprecedented opportunities for the development of new ferroelectric memristors.

Article Details

Volume / Issue Vol. 37, Issue 8
Published February 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (9)

Y

Yiyang Wen

Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University 3 , Tianjin 300071,

Y

Yilin Cao

Department of Chemistry, The Scripps Research Institute, 10550 North Torrey Pines Road, La Jolla, California 92037, United States

H

Hongda Ren

Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education Faculty of Chemistry Northeast Normal University Changchun 130024 P.R. China

X

Xiaona Du

J

Jiaxing Guo

Z

Zhenping Wu

State Key Laboratory of Information Photonics and Optical Communications & School of Physical Science and Technology, Beijing University of Posts and Telecommunications 3 , Beijing 100876,

W

Weiwei Liu

College of Materials Science and Engineering, College of Environment, State Key Laboratory of Advanced Separation Membrane Materials, Zhejiang Key Laboratory of Low-carbon Control Technology for Industrial Pollution

J

Jiangbing Du

State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Key Laboratory of Navigation and Location Services, Department of Electronic Engineering, Shanghai Jiao Tong University 4 , Shanghai 200240,

Y

Yang Zhang