Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing
Abstract
AbstractQuantum dots (QDs) offer significant potential for neuromorphic machine vision, owing to their high absorption coefficients, and to absorption that spans the ultraviolet‐to‐visible range. However, their practical application faces critical challenges in achieving accurate target recognition and tracking in low‐light and dynamically‐changing environments. A fundamental limitation is a result of the exciton‐confinement effect of QDs, which impedes efficient exciton dissociation. To overcome this problem, we synthesized ferroelectric QDs (FE‐QDs) that are functionalized with thiol‐terminated polyvinylidene fluoride (PVDF‐SH) ligands, and empolyed them as the photo‐sensitive floating gate in an organic synaptic transistor. When a polarization voltage is applied to the organic synaptic transistors, the FE‐QD film generates an electric field that counteracts exciton confinement. The process substantially facilitates exciton dissociation in QDs, and regulates charge accumulation in the channel layer. Integrated with machine learning algorithms, the QD‐based device achieved 100% accuracy in detecting simulated car motion in low‐light environments, highlighting the potential of adaptive, dynamic sensing technologies for applications in night vision, autonomous driving, and intelligent transportation systems.
Article Details
Authors (27)
Tingyu Long
Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea
Huanyu Zhou
Jaewan Ko
Department of Chemical and Biological Engineering Korea University Seoul 02841 Republic of Korea
Hongwei Tan
Jaemin Lim
Yanfei Zhao
Daehan Kang
Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea
Eojin Yoon
Gyeong‐Tak Go
Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea
Somin Kim
Seung‐Woo Lee
Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea
Chan‐Yul Park
Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea
Hyojun Choi
Department of Materials Science and Engineering Seoul National University Seoul 08826 Republic of Korea
Hyeran Kim
Research Center for Materials and Analysis Korea Basic Science Institute (KBSI) Daejeon 34133 Republic of Korea
Hyung Joong Yun
Sung Hyuk Park
Kwan Sik Park
Department of Materials Science and Engineering Yonsei University Seoul 03722 Republic of Korea
Jeong Woo Park
Mungeun Kim
Department of Chemical and Biological Engineering Korea University Seoul 02841 Republic of Korea
Yong Soo Cho
Ho Won Jang
Wenqiang Yang
Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics Dresden (CFAED)
Min Hyuk Park
Wan Ki Bae
Sebastiaan van Dijken
NanoSpin, Department of Applied Physics, Aalto University School of Science , P.O. Box 15100, FI-00076 Aalto,
Joona Bang
Department of Chemical and Biological Engineering Korea University Seoul 02841 Republic of Korea
Tae‐Woo Lee
Department of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul Republic of Korea