Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

Abstract

Abstract The rise of big data in today's computing has highlighted the significant limitations of von Neumann architectures for data storage and processing. Concurrently, the downscaling of silicon‐based transistors while retaining low power efficiency and high system reliability has become increasingly challenging. By adopting a post‐Moore approach, this Review proposes the use of hybrid systems comprising ferroelectric materials, 2D semiconductors, and functional molecular switches to respond to current demands for simultaneous high integration density and multifunctional performance. The representative applications of 2D ferroelectric field‐effect transistors (FeFETs) are reviewed and advances in shrinking ferroelectric domain walls at the (sub)nanometer scale are highlighted. The incorporation of molecular switches to enable multimodal device programmability is explored and the implementation of monolithic 3D (M3D) integration to boost chip‐level density and system functionality is discussed. Finally, a forward‐looking vision is presented for future transistors built upon novel ferroelectric platforms. Taken together, this triple‐hybrid paradigm offers a compelling path to transcend Moore's law, paving the way for next‐generation electronics with unprecedented functions and performance.