Advanced Materials

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In <sub>2</sub> Se <sub>3</sub> (Adv. Mater. 20/2026)

S Shahriar Muhammad Nahid (Department of Mechanical Science and Engineering, Grainger College of Engineering University of Illinois Urbana–Champaign Urbana USA) H Haiyue Dong (The Grainger College of Engineering, University of Illinois Urbana-Champaign 3 , Urbana, Illinois 61801,) G Gillian M. Nolan S SungWoo Nam N Nadya Mason (Pritzker School of Molecular Engineering, University of Chicago 11 , Chicago, Illinois 60637,) P Pinshane Y. Huang (Department of Materials Science and Engineering, The Grainger College of Engineering) A Arend M. van der Zande (Holonyak Micro and Nanotechnology Laboratory, The Grainger College of Engineering, University of Illinois Urbana-Champaign)
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Article Details

Volume / Issue Vol. 38, Issue 20
Published April 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher
ISSN: 0935-9648 Physical Sciences

Authors (7)

S

Shahriar Muhammad Nahid

Department of Mechanical Science and Engineering, Grainger College of Engineering University of Illinois Urbana–Champaign Urbana USA

H

Haiyue Dong

The Grainger College of Engineering, University of Illinois Urbana-Champaign 3 , Urbana, Illinois 61801,

G

Gillian M. Nolan

S

SungWoo Nam

N

Nadya Mason

Pritzker School of Molecular Engineering, University of Chicago 11 , Chicago, Illinois 60637,

P

Pinshane Y. Huang

Department of Materials Science and Engineering, The Grainger College of Engineering

A

Arend M. van der Zande

Holonyak Micro and Nanotechnology Laboratory, The Grainger College of Engineering, University of Illinois Urbana-Champaign

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