Freestanding Flexible Vortex Tubes Integrated With Ferroelectric Transistor

F Feng‐Hui Gong (Bay Area Center for Electron Microscopy Songshan Lake Materials Laboratory Dongguan Guangdong China) L Lei Tang (Key Laboratory for Ultrafine Materials of Ministry of Education, School of Chemical Engineering) Y Yu‐Ting Chen (Bay Area Center for Electron Microscopy Songshan Lake Materials Laboratory Dongguan Guangdong China) J Jincheng Zhu (State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang China) X Xiaowei Wang J Jing‐Hui Wang (Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China) S Shuai‐Shuai Yin (Shanghai Synchrotron Radiation Facility (SSRF) Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China) S Su‐Zhen Liu (Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China) X Xiao‐Long Li (Shanghai Synchrotron Radiation Facility (SSRF) Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China) X Xue‐Rong Liu (School of Physical Science and Technology ShanghaiTech University Shanghai China) Y Yu‐Jia Wang (Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China) Y Yun‐Long Tang (Shenyang National Laboratory For Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China) Z Zijian Hong Q Qi‐Jie Liang (Department of Functional Nanomaterials and Devices Songshan Lake Materials Laboratory Dongguan Guangdong China) Y Yin‐Lian Zhu (Dongguan Institute of Materials Science and Technology Chinese Academy of Sciences Dongguan China) X Xiu‐Liang Ma (Dongguan Institute of Materials Science and Technology Chinese Academy of Sciences Dongguan China)

Abstract

ABSTRACT Polar topologies hold great potential in information storage. So far, thin films with polar topological structure are predominantly constrained by the substrate on which they are grown. Such substrate‐stabilized polar topologies limit their integration into memory devices, and consequently, their physical behaviors in data memory remain unclear. Here, we show a ferroelectric field‐effect transistor (Fe‐FET) memory device, which is based on large‐scale freestanding pure polar vortex tube arrays. In situ heating demonstrates that vortex tube arrays in freestanding superlattices undergo a more directly reversible phase transition, evolving from vortex tubes to single domains and ultimately to the disappearance of ferroelectricity. The flexible vortex tubes, which are obtained by removing the sacrificial layers, could bend at a 90° without breaking, demonstrating the nature of robustness. The Fe‐FET exhibits a wide and stable clockwise hysteresis loop, spanning a voltage range of −60 to 60 V and temperatures from room temperature to 450 K. Due to the stable and robust ferroelectric vortex dipole moment arrays, the Fe‐FET achieves a memory retention time of 3600 s and an endurance of 10 4 cycles.

Article Details

Volume / Issue Vol. 38, Issue 32
Published June 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (16)

F

Feng‐Hui Gong

Bay Area Center for Electron Microscopy Songshan Lake Materials Laboratory Dongguan Guangdong China

L

Lei Tang

Key Laboratory for Ultrafine Materials of Ministry of Education, School of Chemical Engineering

Y

Yu‐Ting Chen

Bay Area Center for Electron Microscopy Songshan Lake Materials Laboratory Dongguan Guangdong China

J

Jincheng Zhu

State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang China

X

Xiaowei Wang

J

Jing‐Hui Wang

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China

S

Shuai‐Shuai Yin

Shanghai Synchrotron Radiation Facility (SSRF) Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China

S

Su‐Zhen Liu

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China

X

Xiao‐Long Li

Shanghai Synchrotron Radiation Facility (SSRF) Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China

X

Xue‐Rong Liu

School of Physical Science and Technology ShanghaiTech University Shanghai China

Y

Yu‐Jia Wang

Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China

Y

Yun‐Long Tang

Shenyang National Laboratory For Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang China

Z

Zijian Hong

Q

Qi‐Jie Liang

Department of Functional Nanomaterials and Devices Songshan Lake Materials Laboratory Dongguan Guangdong China

Y

Yin‐Lian Zhu

Dongguan Institute of Materials Science and Technology Chinese Academy of Sciences Dongguan China

X

Xiu‐Liang Ma

Dongguan Institute of Materials Science and Technology Chinese Academy of Sciences Dongguan China