Frequency Switching Neuristor for Realizing Intrinsic Plasticity and Enabling Robust Neuromorphic Computing

W Woojoon Park (Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea) H Hanchan Song E Eun Young Kim (Department of Biomedical Sciences, Graduate School of Ajou University) M Moon Gu Choi (Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea) M Min Gu Lee H Hakseung Rhee G Gwangmin Kim (Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea) T Taewook Go (Department of Materials Science and Engineering KAIST Daejeon Republic of Korea) A Alba Martinez (Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea) D Daehee Kim (Department of Materials Science and Engineering KAIST Daejeon Republic of Korea) J Junmo Kang (Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea) J Jae Hyun In (Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea) K Kyung Min Kim

Abstract

Abstract The human brain's efficiency and adaptability in processing information is largely attributed to spatiotemporal spiking activities and intrinsic plasticity—the ability of neurons to autonomously modulate their excitability. Mott memristors, with their threshold switching characteristics, have been effectively utilized as artificial neurons, or neuristors, to generate spiking activities. However, the implementation of intrinsic plasticity and its significance in neuromorphic computing has yet to be systematically explored. Here, a frequency switching (FS) neuristor is presented that emulates neuron's intrinsic plasticity characteristics. By combining a volatile Mott memristor with a non‐volatile valence change memory (VCM) memristor, the FS neuristor achieves programmable multi‐level frequency–voltage ( f –V ) characteristics analogous to the transfer functions of neuronal intrinsic plasticity. Through device‐based simulations of sparse neural networks, it is proposed that this intrinsic plasticity acts as memory and processor itself, enhancing network performance and reducing energy consumption. Additionally, intrinsic plasticity endows the network with structural plasticity, enabling full recovery of the network's performance after random neuron damage, suggesting a pathway toward more adaptive and resilient neuromorphic computing systems.

Article Details

Volume / Issue Vol. 37, Issue 44
Published November 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

W

Woojoon Park

Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

H

Hanchan Song

E

Eun Young Kim

Department of Biomedical Sciences, Graduate School of Ajou University

M

Moon Gu Choi

Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

M

Min Gu Lee

H

Hakseung Rhee

G

Gwangmin Kim

Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

T

Taewook Go

Department of Materials Science and Engineering KAIST Daejeon Republic of Korea

A

Alba Martinez

Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

D

Daehee Kim

Department of Materials Science and Engineering KAIST Daejeon Republic of Korea

J

Junmo Kang

Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

J

Jae Hyun In

Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

K

Kyung Min Kim