From Inert to Active: Breaking Mott‐localization Enables High Na‐Storage Performance in Na <sub>4</sub> MnFe(PO <sub>4</sub> ) <sub>3</sub> ‐based Cathode

X Xiao‐Tong Wang (MOE Key Laboratory For UV Light‐Emitting Materials and Technology Northeast Normal University Changchun Jilin P. R. China) Z Zhen‐Yi Gu (MOE Key Laboratory For UV Light‐Emitting Materials and Technology Northeast Normal University Changchun Jilin P. R. China) Y Yan Liu X Xin‐Xin Zhao (Department of Chemistry Northeast Normal University Changchun Jilin P. R. China) K Kai Li J Jun‐Ming Cao (State Key Laboratory of Integrated Optoelectronics and MOE Key Laboratory For UV Light‐Emitting Materials and Technology School of Physics Northeast Normal University Changchun Jilin China) F Feilong Dong (Key Laboratory of Cluster Science Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Advanced Technology Research Institute (Jinan), School of Interdisciplinary Science, School of Chemistry and Chemical Engineering) Y Yong‐Li Heng (State Key Laboratory of Integrated Optoelectronics, and MOE Key Laboratory For UV Light‐Emitting Materials and Technology Department of Physics Northeast Normal University Changchun Jilin P. R. China) J Jia‐Lin Yang (State Key Laboratory of Integrated Optoelectronics MOE Key Laboratory for UV Light‐Emitting Materials and Technology Northeast Normal University Changchun Jilin China) X Xing‐Long Wu (MOE Key Laboratory For UV Light‐Emitting Materials and Technology Northeast Normal University Changchun Jilin P. R. China)

Abstract

ABSTRACT As a sustainable cathode material for sodium‐ion batteries, Na 4 MnFe(PO 4 ) 3 (NMFP) is prized for high theoretical operating voltage and cost‐effectiveness. However, its practical electrochemical activity is notoriously poor, contradicting theoretical predictions. Here, we reveal that this inactivity stems primarily from Mott localization, driven by strong electron correlations within the high‐spin 3d 5 electronic configuration (t 2g 3 e g 2 ) of Mn 2+ and Fe 3+ . This symmetric, half‐filled state leads to pronounced charge localization, severely suppressing the intrinsic redox activity. To address this limitation, we devised a symmetry‐breaking reconstruction strategy which reorganizes the spin ordering to promote electron delocalization and activates multiple redox couples (Mn 4+ /Mn 3+ , Mn 3+ /Mn 2+ , and Fe 3+ /Fe 2+ ). More critically, induce a novel “Na2 dp Na1” migration path for Na + , with a remarkably lower energy barrier than those of conventional paths (0.39 vs. 0.98 eV). Consequently, the engineered Na 4 Mn 0.5 Fe 0.5 Cr 0.5 Ti 0.5 (PO 4 ) 3 delivers 138.84 mAh g −1 at 0.1C, which represents a 12.74‐fold breakthrough over the pristine NMFP (10.9 mAh g −1 ). Our findings elucidate symmetry‐breaking as a critical route for activating Mott‐localized states in polyanionic frameworks and establish a new paradigm for designing redox‐active and sustainable cathode materials.

Article Details

Volume / Issue Vol. 38, Issue 26
Published May 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

X

Xiao‐Tong Wang

MOE Key Laboratory For UV Light‐Emitting Materials and Technology Northeast Normal University Changchun Jilin P. R. China

Z

Zhen‐Yi Gu

MOE Key Laboratory For UV Light‐Emitting Materials and Technology Northeast Normal University Changchun Jilin P. R. China

Y

Yan Liu

X

Xin‐Xin Zhao

Department of Chemistry Northeast Normal University Changchun Jilin P. R. China

K

Kai Li

J

Jun‐Ming Cao

State Key Laboratory of Integrated Optoelectronics and MOE Key Laboratory For UV Light‐Emitting Materials and Technology School of Physics Northeast Normal University Changchun Jilin China

F

Feilong Dong

Key Laboratory of Cluster Science Ministry of Education, Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion Materials, Advanced Technology Research Institute (Jinan), School of Interdisciplinary Science, School of Chemistry and Chemical Engineering

Y

Yong‐Li Heng

State Key Laboratory of Integrated Optoelectronics, and MOE Key Laboratory For UV Light‐Emitting Materials and Technology Department of Physics Northeast Normal University Changchun Jilin P. R. China

J

Jia‐Lin Yang

State Key Laboratory of Integrated Optoelectronics MOE Key Laboratory for UV Light‐Emitting Materials and Technology Northeast Normal University Changchun Jilin China

X

Xing‐Long Wu

MOE Key Laboratory For UV Light‐Emitting Materials and Technology Northeast Normal University Changchun Jilin P. R. China