Giant Modulation of Magnetoresistance in a Van Der Waals Magnet by In‐Plane Current Injection

K Kwangsu Kim H Hyo‐Bin Ahn (SKKU Advanced Institute of Nanotechnology Sungkyunkwan University Suwon 16419 South Korea) S Seungho Lee (Institute of Science and Technology Austria (ISTA) , ,) S Seyeop Jeong (Department of Physics University of Ulsan Ulsan 44619 South Korea) D DongHyeon Lee S Siha Lee (Department of Physics University of Ulsan Ulsan 44619 South Korea) S Subin Im (Center for Semiconductor Technology Korea Institute of Science and Technology Seoul Republic of Korea) S Seong Been Kim S Sung Jong Kim (Center for Semiconductor Technology Korea Institute of Science and Technology Seoul 02792 South Korea) J Jungmin Park (Center for Molecular Spectroscopy and Dynamics) N Nyun Jong Lee (Department of Physics University of Ulsan Ulsan 44619 South Korea) H Hyun Cheol Koo K Kyongmo An (Quantum Technology Institute Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea) K Kyoung‐Woong Moon (Quantum Technology Institute Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea) B Bongjae Kim (Department of Physics Kyungpook National University Daegu 41566 South Korea) K Kyoo Kim (Department of Physics Korea Advanced Institute of Science and Technology Daejeon 34141 South Korea) K Kab‐Jin Kim (Department of Physics KAIST Daejeon Republic of Korea) C Changgu Lee (SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 South Korea) K Kyoung‐Whan Kim (Department of Physics Yonsei University Seoul 03722 South Korea) S Se Kwon Kim T Tae‐Eon Park (Center for Semiconductor Technology Korea Institute of Science and Technology Seoul Republic of Korea) S Sanghoon Kim

Abstract

AbstractEfficient magnetization control is a central issue in magnetism and spintronics. Particularly, there are increasing demands for manipulation of magnetic states in van der Waals (vdW) magnets with unconventional functionalities. However, the electrically induced phase transition between ferromagnetic‐to‐antiferromagnetic states without external magnetic field is yet to be demonstrated. Here, the current‐induced magnetic phase transition in a vdW ferromagnet Fe5GeTe2 is reported. Based on magneto‐transport measurements and theoretical analysis, it is demonstrated that transition in the interlayer magnetic coupling occurs through vertical voltage drop between layers induced by current which is attributed to high anisotropy of the resistivity caused by the vdW gaps. Such magnetic phase transition results in giant modulation of the longitudinal magnetoresistance from 5% to 170%. The electrical tunability of the magnetic phase in Fe5GeTe2 with current‐in‐plane geometry opens a path for electric control of magnetic properties, expanding the ability to use vdW magnets for spintronic applications.

Article Details

Volume / Issue Vol. 37, Issue 10
Published March 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (22)

K

Kwangsu Kim

H

Hyo‐Bin Ahn

SKKU Advanced Institute of Nanotechnology Sungkyunkwan University Suwon 16419 South Korea

S

Seungho Lee

Institute of Science and Technology Austria (ISTA) , ,

S

Seyeop Jeong

Department of Physics University of Ulsan Ulsan 44619 South Korea

D

DongHyeon Lee

S

Siha Lee

Department of Physics University of Ulsan Ulsan 44619 South Korea

S

Subin Im

Center for Semiconductor Technology Korea Institute of Science and Technology Seoul Republic of Korea

S

Seong Been Kim

S

Sung Jong Kim

Center for Semiconductor Technology Korea Institute of Science and Technology Seoul 02792 South Korea

J

Jungmin Park

Center for Molecular Spectroscopy and Dynamics

N

Nyun Jong Lee

Department of Physics University of Ulsan Ulsan 44619 South Korea

H

Hyun Cheol Koo

K

Kyongmo An

Quantum Technology Institute Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea

K

Kyoung‐Woong Moon

Quantum Technology Institute Korea Research Institute of Standards and Science Daejeon 34113 Republic of Korea

B

Bongjae Kim

Department of Physics Kyungpook National University Daegu 41566 South Korea

K

Kyoo Kim

Department of Physics Korea Advanced Institute of Science and Technology Daejeon 34141 South Korea

K

Kab‐Jin Kim

Department of Physics KAIST Daejeon Republic of Korea

C

Changgu Lee

SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 South Korea

K

Kyoung‐Whan Kim

Department of Physics Yonsei University Seoul 03722 South Korea

S

Se Kwon Kim

T

Tae‐Eon Park

Center for Semiconductor Technology Korea Institute of Science and Technology Seoul Republic of Korea

S

Sanghoon Kim