Giant Orbital Rashba–Edelstein Effect in Crystalline Cu <sub>2</sub> O/Cu Heterostructures

S San Ko J Jaimin Kang (Department of Materials Science and Engineering KAIST Daejeon Republic of Korea) S Su Jae Kim H Hanhwi Jang (Department of Materials Science and Engineering KAIST Daejeon Republic of Korea) D Do‐Kyeong Nam (Department of Physics KAIST Daejeon Republic of Korea) M Minseok Kang S Sunghoon Kim Y Yeon Sik Jung S Se‐Young Jeong (Department of Physics KAIST Daejeon Republic of Korea) K Kab‐Jin Kim (Department of Physics KAIST Daejeon Republic of Korea) B Byong‐Guk Park (Department of Materials Science and Engineering KAIST Daejeon Republic of Korea)

Abstract

ABSTRACT Orbital current‐induced torque (OT) has emerged as a promising alternative to spin–orbit torque owing to the typically larger orbital Hall conductivity. A substantial OT can be generated at metal/oxide interfaces via the orbital Rashba–Edelstein effect (OREE), which has been predominantly reported in surface‐oxidized Cu structures. However, the lack of well‐defined crystalline and interfacial structures in oxidized Cu has hindered a clear understanding of the underlying mechanism and limited further enhancement of OT. Here, we demonstrate a significantly enhanced OREE in crystalline CuO x /Cu heterostructures with well‐defined interfaces. By employing controlled oxidation of single‐crystalline Cu, we fabricate crystalline CuO x layers with distinct chemical phases and quantify the resulting OT using harmonic Hall measurements. We find that the crystalline Cu 2 O/Cu heterostructure exhibits a damping‐like OT efficiency approximately seven times larger than that of naturally oxidized Cu, highlighting the crucial role of structural ordering and interface sharpness. Notably, this large OT efficiency, combined with the high electrical conductivity of Cu, yields a spin torque conductivity of 1.9 × 10 6  (ℏ/2e)Ω −1  m −1 , exceeding that of Pt. These results establish crystalline Cu 2 O/Cu heterostructures as a promising platform for ultralow‐power spin‐orbitronic devices.

Article Details

Volume / Issue Vol. 1, Issue 1
Published May 28, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (11)

S

San Ko

J

Jaimin Kang

Department of Materials Science and Engineering KAIST Daejeon Republic of Korea

S

Su Jae Kim

H

Hanhwi Jang

Department of Materials Science and Engineering KAIST Daejeon Republic of Korea

D

Do‐Kyeong Nam

Department of Physics KAIST Daejeon Republic of Korea

M

Minseok Kang

S

Sunghoon Kim

Y

Yeon Sik Jung

S

Se‐Young Jeong

Department of Physics KAIST Daejeon Republic of Korea

K

Kab‐Jin Kim

Department of Physics KAIST Daejeon Republic of Korea

B

Byong‐Guk Park

Department of Materials Science and Engineering KAIST Daejeon Republic of Korea