High‐Efficiency Asymmetric Spin Transport Enabled by Nanocolumn Molecular Semiconductors

S Shunhua Hu T Tingting Yang (The MOE Basic Research and Innovation Center for the Targeted Therapeutics of Solid Tumors, School of Basic Medical Sciences, The Second Affiliated Hospital, Jiangxi Medical College, Nanchang University, Nanchang, Jiangxi, China.) S Sai Xu L Lidan Guo Y Yong Wang R Rui Zhang G Guangjie Zhang X Xianrong Gu (Laboratory of Nanosystem and Hierarchical Fabrication, Laboratory of Theoretical and Computational Nanoscience, Laboratory of Standardization and Measurement for Nanotechnology National Center for Nanoscience and Technology Beijing P. R. China) Y Yang Qin K Ke Meng M Meng Wu X Xiangpeng Zhang (Laboratory of Nanosystem and Hierarchical Fabrication, Laboratory of Theoretical and Computational Nanoscience, Laboratory of Standardization and Measurement for Nanotechnology National Center for Nanoscience and Technology Beijing P. R. China) R Ruiheng Zheng (Laboratory of Nanosystem and Hierarchical Fabrication, Laboratory of Theoretical and Computational Nanoscience, Laboratory of Standardization and Measurement for Nanotechnology National Center for Nanoscience and Technology Beijing P. R. China) A Ankang Guo M Min Li C Cheng Zhang K Kai Wang X Xinghua Shi Z Zhixiang Wei (CAS Key Laboratory of Nanosystems and Hierarchical Fabrication, National Center for Nanoscience and Technology) X Xiangnan Sun

Abstract

ABSTRACT Owing to weak spin‐orbit coupling, molecular semiconductors are among the few materials supporting room‐temperature spin functionality, yet their low spin‐transport efficiency ( η s , ∼5%) limits applications. Here, we report molecular spintronic devices featuring vertically asymmetric nanocolumn channels formed by phase separation. These channels confine spins and generate built‐in electric fields, boosting room‐temperature η s to 20%—the highest value reported to date, over five times that of unstructured films. Simultaneously, the nanocolumn channels induce pronounced bias‐dependent asymmetry, with η s of 20% at +0.2 V versus 1% at −0.2 V, yielding a record asymmetry factor, significantly outperforming other material systems (e.g., metal oxides, 2D materials, conventional molecular/inorganic semiconductors). This dual achievement of record‐high efficiency and strong asymmetry establishes a platform for new spintronic functionalities. As a proof of concept, we demonstrate its potential for information‐secure applications via spin‐signal encryption elements and two‐stage spin true random number generators, integrating structural design with spintronic operation.

Article Details

Volume / Issue Vol. 38, Issue 43
Published August 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (20)

S

Shunhua Hu

T

Tingting Yang

The MOE Basic Research and Innovation Center for the Targeted Therapeutics of Solid Tumors, School of Basic Medical Sciences, The Second Affiliated Hospital, Jiangxi Medical College, Nanchang University, Nanchang, Jiangxi, China.

S

Sai Xu

L

Lidan Guo

Y

Yong Wang

R

Rui Zhang

G

Guangjie Zhang

X

Xianrong Gu

Laboratory of Nanosystem and Hierarchical Fabrication, Laboratory of Theoretical and Computational Nanoscience, Laboratory of Standardization and Measurement for Nanotechnology National Center for Nanoscience and Technology Beijing P. R. China

Y

Yang Qin

K

Ke Meng

M

Meng Wu

X

Xiangpeng Zhang

Laboratory of Nanosystem and Hierarchical Fabrication, Laboratory of Theoretical and Computational Nanoscience, Laboratory of Standardization and Measurement for Nanotechnology National Center for Nanoscience and Technology Beijing P. R. China

R

Ruiheng Zheng

Laboratory of Nanosystem and Hierarchical Fabrication, Laboratory of Theoretical and Computational Nanoscience, Laboratory of Standardization and Measurement for Nanotechnology National Center for Nanoscience and Technology Beijing P. R. China

A

Ankang Guo

M

Min Li

C

Cheng Zhang

K

Kai Wang

X

Xinghua Shi

Z

Zhixiang Wei

CAS Key Laboratory of Nanosystems and Hierarchical Fabrication, National Center for Nanoscience and Technology

X

Xiangnan Sun