Highly Tunable Synaptic Modulation in Photo‐Activated Remote Charge Trap Memory for Hardware‐Based Fault‐Tolerant Learning

J Je‐Jun Lee (Center of Quantum Technology, Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea) H Hojin Choi J Ju‐Hee Lee (Department of Electrical and Computer Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea) J Jiwon Moon (Department of Electrical and Computer Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea) T Taehyuk Jang (Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea) B Byoung‐Soo Yu (Center for Quantum Technology, Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea) S Sang Yeon Kim (Center for Quantum Technology, Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea) J Jeong‐Ick Cho (Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea) S Seong‐Jun Han (Center for Quantum Technology, Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea) H Hyung‐Jun Kim (Center for Semiconductor Technology Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea) D Do Kyung Hwang S Seyong Oh J Jin‐Hong Park (Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea)

Abstract

Abstract The rapid expansion of deep learning applications for unstructured data analysis has led to a substantial increase in energy consumption. This increase is primarily due to matrix‐vector multiplication operations, which dominate the energy usage during inference. Although in‐memory computing technologies have alleviated some inefficiencies caused by parallel computing, they still face challenges with broader computational algorithms required for advanced deep learning models. In real‐world data collection scenarios, datasets often contain “noisy labels” (errors in annotations), which cause recognition inefficiencies in conventional in‐memory computing. Here, a hardware‐based fault‐tolerant learning algorithm designed for artificial synapses with tunable synaptic operation is proposed. In this scheme, the devices simultaneously process both learning and regulatory signals, enabling selective attenuation of weight updates induced by mistraining signals. Utilizing a high synaptic tunability ratio of 4380 realized in photo‐activated remote charge trap memory devices based on defect‐engineered hexagonal boron nitride( h ‐BN), the system nearly completely suppresses weight update signals from mislabeled data, which leads to improved recognition accuracy on the mislabeled Modified National Institute of Standards and Technology (MNIST) dataset. These results demonstrate that tunable synaptic devices can enhance training efficiency in in‐memory computing systems for mislabeled datasets, thereby reducing the need for extensive data cleansing and preparation.

Article Details

Volume / Issue Vol. 38, Issue 3
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

J

Je‐Jun Lee

Center of Quantum Technology, Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

H

Hojin Choi

J

Ju‐Hee Lee

Department of Electrical and Computer Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

J

Jiwon Moon

Department of Electrical and Computer Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

T

Taehyuk Jang

Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea

B

Byoung‐Soo Yu

Center for Quantum Technology, Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

S

Sang Yeon Kim

Center for Quantum Technology, Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

J

Jeong‐Ick Cho

Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea

S

Seong‐Jun Han

Center for Quantum Technology, Post‐Silicon Semiconductor Institute Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

H

Hyung‐Jun Kim

Center for Semiconductor Technology Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

D

Do Kyung Hwang

S

Seyong Oh

J

Jin‐Hong Park

Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea