High‐Performance <i>p</i>‐Type 1D Van der Waals Electronics Prepared Through Solution Processing
Abstract
AbstractSolution‐based methods have emerged as a promising approach for large‐scale and low‐cost electronics fabrication. However, solution processing has rarely realized high‐performance p‐type transistors, impeding the advancement of solution‐processed electronics. Among the various solution‐processable material families, van der Waals (vdW) systems stand out due to several attractive features, one of which is the atomically defined interfaces that facilitate carrier charge transport, enabling enhanced device performance. Here, the preparation of transistors based on single tellurium (Te) nanowires (NW) is demonstrated, achieving high mobilities averaging ≈370 cm2 V−1 s−1. Notably, subsequent studies reveal that devices based on Te‐Te NW junctions exhibit mobilities comparable to those of the individual NWs forming the junction. This indicates that the vdW contact between the Te NWs causes negligible degradation in the mobility, which aligns with the theoretical calculations. Based on this finding, a large‐area 1D Te NWs vdW film is further prepared, consisting of a large number of 1D Te NWs interconnected by vdW junctions. The resulting transistors can still maintain remarkable operating characteristics, including an average field‐effect hole mobility of ≈94.9 cm2V−1s−1, a subthreshold swing of ≈248.6 mVdec−1, a current on/off ratio of ≈104, and a low operating voltage of 1 V.
Article Details
Authors (17)
Tianchao Guo
Materials Science and Engineering Physical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal Saudi Arabia
Xiangming Xu
Maolin Chen
Yizhou Wang
Simil Thomas
Center for Renewable Energy and Storage Technologies (CREST), Division of Physical Sciences and Engineering
Linqu Luo
Dekang Zhu
Mrinal K. Hota
Materials Research Laboratory University of Illinois Urbana–Champaign Urbana IL 61801 USA
Yongjiu Lei
Materials Science and Engineering, Physical Science and Engineering Division
Hang Liu
Division of Life Science, The Hong Kong University of Science and Technology, Clear Water Bay
Zhengnan Tian
Materials Science and Engineering Physical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia
Osman B. Bakr
Materials Science and Engineering Physical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia
Omar F. Mohammed
Center of Excellence for Renewable Energy and Storage Technologies, Division of Physical Science and Engineering
Xixiang Zhang
Material Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia.
Mario Lanza
Thomas D. Anthopoulos
Husam N. Alshareef
Center for Renewable Energy and Storage Technologies (CREST), Division of Physical Sciences and Engineering