High‐Performance Phototransistor Based on a 2D Polybenzimidazole Polymer

A Anupam Prasoon (Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry Technische Universität Dresden 01062 Dresden Germany) P Preetam Dacha (Center for Advancing Electronics Dresden (cfaed) Faculty of Electrical and Computer Engineering Technische Universität Dresden 01062 Dresden Germany) H Heng Zhang E Elif Unsal M Mike Hambsch A Alexander Croy (Institute of Physical Chemistry, Friedrich Schiller University 1 , Jena,) S Shuai Fu (Center for Advancing Electronics Dresden and Faculty of Chemistry and Food Chemistry) N Nguyen Ngan Nguyen K Kejun Liu H Haoyuan Qi S Sein Chung (Department of Chemical Engineering, Pohang University of Science and Technology) M Minyoung Jeong (Department of Chemical Engineering Pohang University of Science and Technology Pohang 37673 Republic of Korea) L Lei Gao U Ute Kaiser K Kilwon Cho (Department of Chemical Engineering, Pohang University of Science and Technology) H Hai I. Wang (Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany) R Renhao Dong G Gianaurelio Cuniberti (Institute for Materials Science and Max Bergmann Center of Biomaterials) M Mischa Bonn S Stefan C. B. Mannsfeld X Xinliang Feng

Abstract

Abstract Photodetectors are fundamental components of modern optoelectronics, enabling the conversion of light into electrical signals. The development of high‐performance phototransistors necessitates materials with both high charge carrier mobility and robust photoresponse. However, achieving both in a single material poses challenges due to inherent trade‐offs. Herein, this study introduces a polybenzimidazole‐(1,3‐diazole)‐based 2D polymer (2DPBI), synthesized as few‐layer, crystalline films covering ≈28 cm 2 on the water surface at room temperature, with large crystalline domain sizes ranging from 110 to 140 µm 2 . The 2DPBI incorporates a π‐conjugated photoresponsive porphyrin motif through a 1,3‐diazole linkage, exhibiting enhanced π‐electron delocalization, a narrow direct band gap of ≈1.18 eV, a small reduced electron–hole effective mass ( m * = 0.171  m 0 ), and a very high resonant absorption coefficient of up to 10 6 cm −1 . Terahertz spectroscopy reveals excellent short‐range charge carrier mobility of ≈240 cm 2 V −1 s −1 . Temperature‐dependent photoconductivity measurements and theoretical calculations confirm a band‐like charge transport mechanism. Leveraging these features, 2DPBI‐based phototransistors demonstrate an on/off ratio exceeding 10 8 , photosensitivity of 1.08 × 10 7 , response time of 1.1 ms, and detectivity of 2.0 × 10 13 Jones, surpassing previously reported standalone few‐layer 2D materials and are on par with silicon photodetectors. The unique characteristics of 2DPBI make it a promising foundation for future optoelectronic devices.

Article Details

Volume / Issue Vol. 37, Issue 33
Published August 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (21)

A

Anupam Prasoon

Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry Technische Universität Dresden 01062 Dresden Germany

P

Preetam Dacha

Center for Advancing Electronics Dresden (cfaed) Faculty of Electrical and Computer Engineering Technische Universität Dresden 01062 Dresden Germany

H

Heng Zhang

E

Elif Unsal

M

Mike Hambsch

A

Alexander Croy

Institute of Physical Chemistry, Friedrich Schiller University 1 , Jena,

S

Shuai Fu

Center for Advancing Electronics Dresden and Faculty of Chemistry and Food Chemistry

N

Nguyen Ngan Nguyen

K

Kejun Liu

H

Haoyuan Qi

S

Sein Chung

Department of Chemical Engineering, Pohang University of Science and Technology

M

Minyoung Jeong

Department of Chemical Engineering Pohang University of Science and Technology Pohang 37673 Republic of Korea

L

Lei Gao

U

Ute Kaiser

K

Kilwon Cho

Department of Chemical Engineering, Pohang University of Science and Technology

H

Hai I. Wang

Max Planck Institute for Polymer Research, Ackermannweg 10, Mainz 55128, Germany

R

Renhao Dong

G

Gianaurelio Cuniberti

Institute for Materials Science and Max Bergmann Center of Biomaterials

M

Mischa Bonn

S

Stefan C. B. Mannsfeld

X

Xinliang Feng