Hybrid Liquid Metal Cathode Enables High‐Performance Intrinsically Stretchable OLEDs

W Wonbeom Lee (Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon Republic of Korea) W Wei Liu C Cheng Zhang S Seungmin Shin J Jaejun Lee J Jaedong Jang (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea) S Sanggil Park (Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon Republic of Korea) S SeungBum Hong S Sihong Wang (Pritzker School of Molecular Engineering) H Himchan Cho (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea)

Abstract

ABSTRACT Intrinsically stretchable light‐emitting diodes (LEDs) are essential for next‐generation wearable and implantable optoelectronics. However, achieving high‐performance in intrinsically stretchable LEDs remains elusive due to the absence of a stretchable cathode that concurrently ensures efficient electron injection, mechanical compliance, and high optical reflectance. Here, we introduce a hybrid liquid metal—liquid metal particle (Hyb‐LM) cathode, engineered by selective rupture of surface liquid metal particles (LMPs), which facilitates their transformation into a continuous liquid metal (LM) layer. The resulting bilayer structure, comprising a surface LM layer and an underlying LMP layer, exhibits an exceptional combination of low work function (∼4.1 eV), high reflectance (∼90%), low sheet resistance (2.70 × 10 − 2 Ω sq −1 ), and negligible resistance changes under 150% strain (R/R 0 = 1.03 at 150% strain), overcoming fundamental limitations in state‐of‐the‐art stretchable cathodes. The Hyb‐LM cathode enables the realization of intrinsically stretchable organic LEDs with a low turn‐on voltage of 3.0 V, a maximum luminance of 17 670 cd m −2 , and a record‐high current efficiency of 10.35 cd A −1 , representing a critical advancement toward stretchable displays and implantable optoelectronics.

Article Details

Volume / Issue Vol. 38, Issue 25
Published May 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

W

Wonbeom Lee

Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon Republic of Korea

W

Wei Liu

C

Cheng Zhang

S

Seungmin Shin

J

Jaejun Lee

J

Jaedong Jang

Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

S

Sanggil Park

Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon Republic of Korea

S

SeungBum Hong

S

Sihong Wang

Pritzker School of Molecular Engineering

H

Himchan Cho

Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea