Advanced Materials

In‐situ p‐Doping of Nanometer Tellurium‐based Oxide for Room‐Temperature CMOS Circuits (Adv. Mater. 36/2026)

M Mengfei He (Institute of Fundamental and Frontier Sciences State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China) H Hamin Choi (Department of Chemical Engineering Pohang University of Science and Technology Pohang Gyeongbuk Republic of Korea) Z Zhikai Le (Institute of Fundamental and Frontier Sciences State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China) X Xiaomin Yang Y Yanlin Huang Y Youjin Reo S Sai Bai M Mingyang Wang H Huihui Zhu Y Yong‐Young Noh (Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang Republic of Korea) A Ao Liu
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Article Details

Volume / Issue Vol. 38, Issue 36
Published June 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher
ISSN: 0935-9648 Physical Sciences

Authors (11)

M

Mengfei He

Institute of Fundamental and Frontier Sciences State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China

H

Hamin Choi

Department of Chemical Engineering Pohang University of Science and Technology Pohang Gyeongbuk Republic of Korea

Z

Zhikai Le

Institute of Fundamental and Frontier Sciences State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China

X

Xiaomin Yang

Y

Yanlin Huang

Y

Youjin Reo

S

Sai Bai

M

Mingyang Wang

H

Huihui Zhu

Y

Yong‐Young Noh

Department of Chemical Engineering Pohang University of Science and Technology (POSTECH) Pohang Republic of Korea

A

Ao Liu

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