Intelligent Tactile Perception Revolution: Innovations in Flexible FET‐Based Tactile Sensors for Next‐Gen Human–Machine Interfaces

Q Qiyi Nie (School of Mechatronic Engineering and Automation Shanghai University Shanghai China) F Fei Wang F Feng‐Shou Yang (Institute of Electronics Engineering National Tsing Hua University Hsinchu Taiwan) H Hanzhi Xun (School of Microelectronics Shanghai University Shanghai China) J Jiachen Hou (Institute of Artificial Intelligence School of Future Technology Shanghai University Shanghai China) Q Qingyang Xu (State Key Laboratory of Biobased Transportation Fuel Technology, Department of Polymer Science and Engineering) Y Ying Hong (School of Chemistry and Chemical Engineering) J Jingyu Zhang (East China University of Science and Technology , , ,) X Xueyong Wei (School of Instrument Science and Technology State Key Laboratory for Manufacturing Systems Engineering Xi'an Jiaotong University Xi'an China) Y Yen‐Fu Lin (Department of Physics National Chung Hsing University Taichung Taiwan) P Po‐Wen Chiu (Institute of Electronics Engineering National Tsing Hua University Hsinchu Taiwan) L Longhui Zeng (Key Laboratory of Material Physics of Ministry of Education, and School of Physics Zhengzhou University Zhengzhou P. R. China) M Mengjiao Li B Biao Wang (New Cornerstone Science Laboratory, Shenzhen Grubbs Institute, Department of Chemistry, and Guangming Advanced Research Institute) J Jianhua Zhang

Abstract

ABSTRACT Field‐effect transistors (FETs) with controllable field‐dependent carrier transport characteristics and unique signal amplification have provided an excellent platform for developing high‐performance artificial sensors and intelligent‐sensing interaction technologies. As the critical component of humanoid robotics, FET‐based tactile sensors with diverse working mechanisms have been studied intensively and have demonstrated remarkable potential in intelligent human–machine interactions. Given that effective carrier‐modulation capabilities of FETs significantly determine critical metrics of tactile sensing systems, this review systematically explores how diverse device, material, and processing innovations create different sensing characteristics, including tactile sensitivity, stretchability, and resolution, that thus underlie diverse strategies to engineer sensing behaviors toward specific applications of FET tactile sensors. We also examine the various strategies, including material–structure co‐design, stretchability engineering, and high‐resolution fabrication technologies, to engineer sensing behaviors in FET tactile sensors toward specific applications spanning wearable electronic skins, tactile‐perceptive neuromorphic systems, and intelligent displays. Finally, we discuss the challenges regarding signal stability under dynamic deformation, response linearity, and saturation in high‐pressure regimes, and scalable high‐resolution integration, and outline promising solutions through the co‐optimization of intrinsically stretchable materials, innovative device architectures, and advanced multi‐scale fabrication processes.

Article Details

Volume / Issue Vol. 38, Issue 10
Published February 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (15)

Q

Qiyi Nie

School of Mechatronic Engineering and Automation Shanghai University Shanghai China

F

Fei Wang

F

Feng‐Shou Yang

Institute of Electronics Engineering National Tsing Hua University Hsinchu Taiwan

H

Hanzhi Xun

School of Microelectronics Shanghai University Shanghai China

J

Jiachen Hou

Institute of Artificial Intelligence School of Future Technology Shanghai University Shanghai China

Q

Qingyang Xu

State Key Laboratory of Biobased Transportation Fuel Technology, Department of Polymer Science and Engineering

Y

Ying Hong

School of Chemistry and Chemical Engineering

J

Jingyu Zhang

East China University of Science and Technology , , ,

X

Xueyong Wei

School of Instrument Science and Technology State Key Laboratory for Manufacturing Systems Engineering Xi'an Jiaotong University Xi'an China

Y

Yen‐Fu Lin

Department of Physics National Chung Hsing University Taichung Taiwan

P

Po‐Wen Chiu

Institute of Electronics Engineering National Tsing Hua University Hsinchu Taiwan

L

Longhui Zeng

Key Laboratory of Material Physics of Ministry of Education, and School of Physics Zhengzhou University Zhengzhou P. R. China

M

Mengjiao Li

B

Biao Wang

New Cornerstone Science Laboratory, Shenzhen Grubbs Institute, Department of Chemistry, and Guangming Advanced Research Institute

J

Jianhua Zhang