Interference Crystallization Rebalances Facet Competition for Efficient and Stable Perovskite Solar Cells

W Wenna Huang (School of Electronics and Electrical Engineering, and State Key Laboratory of New Textile Materials and Advanced Processing Wuhan Textile University Wuhan China) H Haibing Wang K Kun Dai (DFG Cluster of Excellence livMatS@FIT−Freiburg Center for Interactive Materials and Bioinspired Technologies, University of Freiburg, Georges-Köhler-Allee 105, 79110 Freiburg, Germany) J Jiaxin Zhang (Department of Pediatric Surgery, Tongji Hospital, Tongji Medical College, Huazhong University of Science and Technology) G Guoyi Chen C Chi Zhang G Guang Li X Xuzhi Hu (Shandong Laboratory of Advanced Materials and Green Manufacturing at Yantai) Y Yansong Ge F Fang Yao X Xiaojuan Cao C CHEN TAO C Chen Wang J Jiwei Liang (School of Electronics and Electrical Engineering, and State Key Laboratory of New Textile Materials and Advanced Processing Wuhan Textile University Wuhan China) M Mingming Hu Z Zixi Yu J Jianwei Zhao (Shenzhen HUASUAN Technology Co., Ltd) Z Zuojun Tan (College of Engineering Huazhong Agricultural University Wuhan China) H Hongwei Lei W Weijun Ke G Guojia Fang

Abstract

ABSTRACT Crystallographic orientation governs lattice strain, defect formation, and stability in perovskite solar cells, yet precise control remains challenging in sequential deposition due to the intrinsic growth dominance of low‐surface‐energy (100) facets. Here, we report an interference crystallization strategy that reshapes facet competition by modulating A‐site intercalation kinetics. Incorporation of a sulfonate‐based additive into the PbI 2 precursor imposes facet‐dependent kinetic perturbation during FA + insertion. Preferential adsorption of this additive on the (100) surface restricts A‐site accessibility and selectively retards its growth, whereas weaker interaction with the (111) surface preserves intercalation kinetics and enables its competitive development. This asymmetric interference establishes a balanced (100)/(111) orientation distribution, alleviating residual lattice strain associated with single‐facet dominance. The coexistence of both facets integrates their complementary merits, combining the superior optoelectronic quality of (100) with the enhanced moisture tolerance of (111). Meanwhile, strong surface adsorption of this additive on both facets provides additional defect passivation, suppressing non‐radiative recombination. Devices fabricated via this strategy achieve a power conversion efficiency of 26.41% and exhibit negligible degradation after 1300 h maximum power point tracking, demonstrating interference‐mediated crystallization as a viable pathway for orientation regulation in sequentially deposited perovskites.

Article Details

Volume / Issue Vol. 38, Issue 37
Published July 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (21)

W

Wenna Huang

School of Electronics and Electrical Engineering, and State Key Laboratory of New Textile Materials and Advanced Processing Wuhan Textile University Wuhan China

H

Haibing Wang

K

Kun Dai

DFG Cluster of Excellence livMatS@FIT−Freiburg Center for Interactive Materials and Bioinspired Technologies, University of Freiburg, Georges-Köhler-Allee 105, 79110 Freiburg, Germany

J

Jiaxin Zhang

Department of Pediatric Surgery, Tongji Hospital, Tongji Medical College, Huazhong University of Science and Technology

G

Guoyi Chen

C

Chi Zhang

G

Guang Li

X

Xuzhi Hu

Shandong Laboratory of Advanced Materials and Green Manufacturing at Yantai

Y

Yansong Ge

F

Fang Yao

X

Xiaojuan Cao

C

CHEN TAO

C

Chen Wang

J

Jiwei Liang

School of Electronics and Electrical Engineering, and State Key Laboratory of New Textile Materials and Advanced Processing Wuhan Textile University Wuhan China

M

Mingming Hu

Z

Zixi Yu

J

Jianwei Zhao

Shenzhen HUASUAN Technology Co., Ltd

Z

Zuojun Tan

College of Engineering Huazhong Agricultural University Wuhan China

H

Hongwei Lei

W

Weijun Ke

G

Guojia Fang