Ionotronics‐Enabled Emerging Halide Perovskite Optoelectronic Devices
Abstract
Abstract With the rise of technologies such as artificial vision, smart wearables, and interactive displays, the demand for high‐performance, intelligent, and portable optoelectronic devices has increased significantly. However, conventional silicon‐based optoelectronic devices face limitations in perceiving, processing, and feeding back optoelectrical information, making them unable to meet increasing demanding performance requirements. Conversely, halide perovskites, characterized by excellent optoelectronic properties and high structural tunability, show great potential for advanced next‐generation optoelectronic applications. Recent studies have revealed diverse ionic and electronic behaviors that are crucial for achieving essential physical properties in the design of emerging optoelectronic devices. This review discusses the ionotronic mechanisms of halide perovskites and elucidates how these mechanisms enable high photosensitivity, tunable conductivity, and efficient luminescence. Recent developments in emerging photodetectors, neuromorphic processors, and full‐color displays are discussed for intelligent applications. Additionally, the prospects and challenges of ionotronics‐driven halide perovskite‐based optoelectronic devices are evaluated.
Article Details
Authors (10)
Runsheng Gao
Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China
Xiaojian Zhu
CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences 1 , Ningbo 315201,
Xiaohan Meng
Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China
Xuerong Liu
Shuiming Guo
Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China
Quanxing Yao
Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China
Guozhi Chai
Jinshui Miao
Hongwei Tan
Run‐Wei Li
Zhejiang Key Laboratory of Magnetic Materials and Applications Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo P. R. China