Lead Derivative‐Based Precursor Engineering Enables Halogen‐Uniform Perovskite Solar Cells with Enhanced Stability and Mechanical Tolerance

Y Yaochang Yue (State Key Laboratory of Bioinspired Interfacial Materials Science Bioinspired Science Innovation Center, Hangzhou International Innovation Institute Beihang University Hangzhou 311115 P. R. China) W Weichao Zhang R Rongshen Yang (School of Chemistry Beijing Advanced Innovation Center for Biomedical Engineering Beihang University Beijing Shandong 100191 China) Y Yongqing Wang X Xin Bian (State Key Laboratory of Medicinal Chemical Biology, College of Life Sciences, Frontiers Science Center for Cell Responses, Nankai University) C Chao Qu S Shengli Yue (School of Chemistry Beijing Advanced Innovation Center for Biomedical Engineering Beihang University Beijing People's Republic of China) S Shilin Li W Wanfei Shi (CAS Key Laboratory of Nanosystem and Hierarchical Fabrication CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190 China) Y Yanxun Li H Huiqiong Zhou (CAS Key Laboratory of Nanosystem and Hierarchical Fabrication CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology Beijing People's Republic of China) Y Yuan Zhang

Abstract

AbstractPerovskite solar cells (PSCs) with supreme opto‐electrical properties and solution‐processability have attracted tremendous interest. To realize state‐of‐the‐art efficiencies in PSCs, delicate control of bandgap (E g) is required, which generally involves using mixed halogens. This, however, can result in unfavorable phase segregation to negatively influence on the target efficiency and long‐term stability. Herein, a viable precursor method is demonstrated for preparing halide‐uniform perovskites based on lead derivatives of nPbI2:1PbXA. It is found that nPbI2:1PbXA enables tuning the bonding preference and strength between PbI2 and PbBr2 in the precursor, leading to generating stable ‐I‐Br‐I‐Br‐ fragments, which eventually minimizes halide segregation in the perovskite. The precursor approach have been applied to a series of wide‐bandgap mixed halide perovskites, achieving boosted efficiencies of 21.3% and 20.3% in CsPbI2.8Br0.2 (bandgap of 1.74 eV) and Cs0.2FA0.8I1.9Br1.1 (bandgap of 1.77 eV) based solar cells. Interestingly, the connection between the modified halide homogeneity and mechanical tolerance is found: the better the uniformity in the halide distribution, the higher the mechanical resistance of the perovskite to compressive or bending forces. The solar cells with modified halogen uniformity exhibit impressive long‐term stability, with the retention of >90% of the initial efficiencies after 1500 h of continuous illumination under maximum power point tracking.

Article Details

Volume / Issue Vol. 37, Issue 24
Published June 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (12)

Y

Yaochang Yue

State Key Laboratory of Bioinspired Interfacial Materials Science Bioinspired Science Innovation Center, Hangzhou International Innovation Institute Beihang University Hangzhou 311115 P. R. China

W

Weichao Zhang

R

Rongshen Yang

School of Chemistry Beijing Advanced Innovation Center for Biomedical Engineering Beihang University Beijing Shandong 100191 China

Y

Yongqing Wang

X

Xin Bian

State Key Laboratory of Medicinal Chemical Biology, College of Life Sciences, Frontiers Science Center for Cell Responses, Nankai University

C

Chao Qu

S

Shengli Yue

School of Chemistry Beijing Advanced Innovation Center for Biomedical Engineering Beihang University Beijing People's Republic of China

S

Shilin Li

W

Wanfei Shi

CAS Key Laboratory of Nanosystem and Hierarchical Fabrication CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190 China

Y

Yanxun Li

H

Huiqiong Zhou

CAS Key Laboratory of Nanosystem and Hierarchical Fabrication CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology Beijing People's Republic of China

Y

Yuan Zhang