Light‐Driven Reconfigurable Logic in a Monolithic Perovskite Device via Nonlinear Photoresponse Switching

D Dante Ahn (Sensor System Research Center Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea) Y Youngsoo Jang (Department of Chemistry) M Minz Lee (Sensor System Research Center Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea) W Wookyung Jeon (Department of Materials Engineering, Korea Aerospace University 2 , Goyang-city, Gyeonggi-do 10540,) Y Yohan Yoon (Department of Materials Engineering, Korea Aerospace University 2 , Goyang-city, Gyeonggi-do 10540,) H Heon Lee (Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea) A Assa Aravindh Sasikala (Research Unit of Sustainable Chemistry University of Oulu Oulu 90570 Finland) N Namsoo Lim (Department of Energy and Materials Engineering Dongguk University‐Seoul Seoul 04620 Republic of Korea) C Chandran Balamurugan (Department of Energy and Materials Engineering Dongguk University‐Seoul Seoul 04620 Republic of Korea) H Hyeonghun Kim (School of Chemical Engineering Chonnam National University Gwangju 61186 Republic of Korea) G Gun‐Young Jung (Gwangju Institute of Science and Technology (GIST) School of Materials Science and Engineering Gwangju 61005 Republic of Korea) S Sooncheol Kwon (Department of Energy and Materials Engineering Dongguk University‐Seoul Seoul Republic of Korea) M Minah Seo (Sensor System Research Center, Korea Institute of Science and Technology 5 , Seoul 02792,) Y Yusin Pak (Sensor System Research Center Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea)

Abstract

Abstract Modulating nonlinear carrier dynamics in a single‐layer device is essential for achieving complex logic operations with minimal power consumption; however, it remains challenging due to inherently linear charge transport and unipolar photoresponses. Here, a multifunctional optoelectronic logic gate (OELG) based on a bias‐free, single‐layer perovskite device is reported that exhibits light intensity‐dependent polarity switching. Incorporation of poly‐L‐lysine into MAPbI 3 enables trap‐state engineering for nonlinear response modulation. An asymmetric dual‐photogate architecture allows spatially controlled charge transport by tuning the position of incident light. This configuration enables the realization of all eight fundamental logic gate functions, including XOR and XNOR, in a single material and device. Additionally, the device independently handles two channels, amplitude inputs, and temporal modulation inputs. It performs logic operations not by pixel‐level imaging, but by applying a scenario‐based conceptual modulation map to the device, with the outputs derived from experimentally recorded photovoltage responses. These findings establish a promising platform for compact, energy‐efficient, light‐driven logic systems with potential applications in light fidelity (Li‐Fi) communication and on‐device artificial intelligence.

Article Details

Volume / Issue Vol. 38, Issue 14
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

D

Dante Ahn

Sensor System Research Center Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

Y

Youngsoo Jang

Department of Chemistry

M

Minz Lee

Sensor System Research Center Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea

W

Wookyung Jeon

Department of Materials Engineering, Korea Aerospace University 2 , Goyang-city, Gyeonggi-do 10540,

Y

Yohan Yoon

Department of Materials Engineering, Korea Aerospace University 2 , Goyang-city, Gyeonggi-do 10540,

H

Heon Lee

Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea

A

Assa Aravindh Sasikala

Research Unit of Sustainable Chemistry University of Oulu Oulu 90570 Finland

N

Namsoo Lim

Department of Energy and Materials Engineering Dongguk University‐Seoul Seoul 04620 Republic of Korea

C

Chandran Balamurugan

Department of Energy and Materials Engineering Dongguk University‐Seoul Seoul 04620 Republic of Korea

H

Hyeonghun Kim

School of Chemical Engineering Chonnam National University Gwangju 61186 Republic of Korea

G

Gun‐Young Jung

Gwangju Institute of Science and Technology (GIST) School of Materials Science and Engineering Gwangju 61005 Republic of Korea

S

Sooncheol Kwon

Department of Energy and Materials Engineering Dongguk University‐Seoul Seoul Republic of Korea

M

Minah Seo

Sensor System Research Center, Korea Institute of Science and Technology 5 , Seoul 02792,

Y

Yusin Pak

Sensor System Research Center Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea