Low‐Dimensional V–VI van der Waals Compound Photodetectors

Y Yu Chen H Huanrong Liang (State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat‐sen University Guangzhou Guangdong P.R. China) X Xinyi Guan (State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat‐sen University Guangzhou Guangdong P.R. China) X Xiancheng Meng (State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat‐sen University Guangzhou Guangdong P.R. China) L Lizhao Su (State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat‐sen University Guangzhou Guangdong P.R. China) Y Yuhang Ma J Jiandong Yao (School of Physical Science and Technology Third Generation Semiconductor Industry Research Institute Guangxi University Nanning China) G Guowei Yang

Abstract

ABSTRACT This review for the first time provides a comprehensive overview on the low‐dimensional V–VI van der Waals compounds‐based photodetectors. It begins with the fundamental physical mechanisms for photodetection and the properties of various V–VI van der Waals compounds. Then, the preparation methods for producing low‐dimensional V–VI compounds have been presented. Following this, various photodetectors based on low‐dimensional V–VI compounds with distinct characteristics have been epitomized by categorizing them into trivial semiconductors and non‐trivial topological insulators. Subsequently, photodetectors built of V–VI compounds based heterostructures have been introduced, elaborating on the collaborative benefits enabled by heterostructuring. In the end, the future directions of this burgeoning domain have been proposed. On the whole, this review presents a full landscape of low‐dimensional V–VI van der Waals compound photodetectors, underscoring alternative paradigms for the implementation of the next generation of advanced optoelectronic devices and systems.

Article Details

Volume / Issue Vol. 1, Issue 1
Published August 13, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

Y

Yu Chen

H

Huanrong Liang

State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat‐sen University Guangzhou Guangdong P.R. China

X

Xinyi Guan

State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat‐sen University Guangzhou Guangdong P.R. China

X

Xiancheng Meng

State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat‐sen University Guangzhou Guangdong P.R. China

L

Lizhao Su

State Key Laboratory of Optoelectronic Materials and Technologies Nanotechnology Research Center School of Materials Science & Engineering Sun Yat‐sen University Guangzhou Guangdong P.R. China

Y

Yuhang Ma

J

Jiandong Yao

School of Physical Science and Technology Third Generation Semiconductor Industry Research Institute Guangxi University Nanning China

G

Guowei Yang