Machine‐Learning‐Designed BCZT–SBT Heterointerface Unlocks Fatigue‐Resistant Energy Storage
Abstract
Abstract Dielectric capacitors are attractive for advanced energy storage owing to their ultrafast charge–discharge capability, yet their practical use is hindered by severe fatigue under repeated operation at ultrahigh electric fields. Achieving fatigue‐free performance therefore represents a key challenge in dielectric design. Here, guided by machine learning (ML), SrBi 2 Ta 2 O 9 (SBT) is introduced into Ba 0.85 Ca 0.15 Zr 0.1 Ti 0.9 O 3 (BCZT) to construct a (1‐ x )BCZT‐ x SBT solid solution. At x = 0.10, the coexistence of perovskite and tungsten bronze phases gives rise to an epitaxial interfacial layer only a few unit cells thick, formed by lattice mismatch. Atomic‐scale analyses reveal that this hetero‐barrier effectively suppresses carrier migration, while the tungsten bronze phase promotes polarization homogenization, together enhancing both voltage endurance and reliability. As a result, 0.90BCZT‐0.10SBT achieves a recoverable energy density ( W rec ) of 9.94 J cm −3 with 92.1% efficiency, and more strikingly, maintains stable performance after 10 9 charge–discharge cycles without degradation, enabled by an elevated Schottky barrier. This work not only uncovers the atomic origin of fatigue resistance in lead‐free dielectrics but also establishes a ML‐guided strategy for designing next‐generation high‐performance, fatigue‐free capacitors for reliable energy storage.
Article Details
Authors (11)
Zixiong Sun
School of Materials Science and Engineering, Shaanxi University of Science & Technology 2 , Xi'an 710021,
Tiancheng Luo
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR) 1 , 2 Fusionopolis Way, Innovis #08–03, Singapore 138634,
Pan Gao
State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
Hongyu Yang
Peiyao Sun
Department of Biology Shenzhen MSU‐BIT University Shen Zhen China
Yao Li
Hongmei Jing
Ye Tian
He Qi
Zhuo Wang
Daniel Q. Tan