Macroscopic Janus Transition Metal Dichalcogenide Single Crystals With Enhanced Piezoelectricity and Carrier Mobility

H Hongzhi Shen H Hao Zhou X Xueqiu Zheng (Department of Chemistry Zhejiang Key Laboratory of Excited‐State Energy Conversion and Energy Storage State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University Hangzhou China) J Jinkun Liu J JinCheng He F Fei Xue (State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering) K Kunyan Zhang (Department of Chemistry, University of California 1 , Berkeley, California 94720,) E Enzheng Shi (Research Center for Industries of the Future and School of Engineering) Y Yunfan Guo

Abstract

ABSTRACT Janus transition metal dichalcogenides (TMDCs), featuring intrinsic out‐of‐plane symmetry breaking and permanent electrical dipole moments, open novel avenues for atomic‐scale symmetry control. However, the absence of high‐quality, macroscopic single crystals has hindered the exploration of their predicted intriguing properties and practical applications. Herein, we demonstrate the synthesis of millimeter‐scale single‐crystal Janus TMDC monolayers, including MoSSe, WSSe, MoSeS, and WSeS. A combination of spectroscopic, microscopic, and electrical measurements confirms their exceptional crystallinity and spatial homogeneity over large areas. Notably, in contrast to conventional TMDC monolayers, the obtained Janus materials exhibit a strong out‐of‐plane piezoelectric response, with record experimental 𝑑 33 value of ∼2.06 pm/V for WSSe and ∼1.56 pm/V for MoSSe, representing an enhancement of over 15 times compared to previously reported experimental results. Moreover, field‐effect transistors (FETs) based on Janus MoSSe achieve an exceptional carrier mobility of ∼13 cm 2 ·V −1 ·s −1 , along with a device yield of 95% across an array of 100 devices. This work provides a feasible pathway for the scalable production of high‐quality, single‐crystal Janus materials and highlights their promise for integration into next‐generation electronic and optoelectronic devices.

Article Details

Volume / Issue Vol. 38, Issue 14
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (9)

H

Hongzhi Shen

H

Hao Zhou

X

Xueqiu Zheng

Department of Chemistry Zhejiang Key Laboratory of Excited‐State Energy Conversion and Energy Storage State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University Hangzhou China

J

Jinkun Liu

J

JinCheng He

F

Fei Xue

State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering

K

Kunyan Zhang

Department of Chemistry, University of California 1 , Berkeley, California 94720,

E

Enzheng Shi

Research Center for Industries of the Future and School of Engineering

Y

Yunfan Guo