Manipulating Förster and Dexter Energy Transfer via Generation Regulation of Dendritic TADF Sensitizer for Solution‐Processable Narrowband Electroluminescence with EQE over 40%

G Guimin Zhao (Jiangsu Province Hi-Tech Key Laboratory for Bio-Medical Research, Jiangsu Engineering Laboratory of Smart Carbon-Rich Materials and Device, School of Chemistry and Engineering) Z Zhengmao Zhang (Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics Jiangsu Engineering Laboratory of Smart Carbon‐Rich Materials and Device School of Chemistry and Engineering Southeast University Nanjing Jiangsu 211189 China) Y Yuheng Lou (Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics Jiangsu Engineering Laboratory of Smart Carbon‐Rich Materials and Device School of Chemistry and Engineering Southeast University Nanjing Jiangsu 211189 China) S Shuai Lv W Wenwen Tian (Department of Biology, Washington University in St. Louis) Y Yueming Sun H Hong Yang (The First Affiliated Hospital of Air Force Military Medical University Xi’an China) W Wei Jiang

Abstract

Abstract A high‐efficiency thermally activated delayed fluorescence (TADF) sensitized fluorophor, abbreviated as TSF, requires suppressing Dexter energy transfer (DET) while ensuring an effective Förster resonance energy transfer (FRET). The current general strategy for blocking DET is encapsulating the terminal emitter to increase the distance between the TADF sensitizer and emitter (RDA); however, there are few reports on increasing RDA by modifying the molecular structure of the TADF sensitizer. Here, a molecular design is proposed to modulate RDA from the perspective of TADF sensitizer, where three dendritic TADF sensitizers (nGPh‐5CzBN, n = generation) are developed by increasing the generation of peripheral branches. On the one hand, TADF sensitizer with high‐generation dendrons blocks DET and prevents excitons loss by enlarging RDA; on the other hand, the excessive cladding of dendritic TADF sensitizer, in turn, also hinders efficient FRET from itself to the emitter. As a result, a record‐high maximum external quantum efficiency (EQEmax) of 40.6% is realized for 2GPh‐5CzBN‐based solution‐processable TSF‐OLEDs, with a full width at half maximum of 34 nm, but the EQEmax values are 23.9% and 16.0% for 1GPh‐5CzBN‐based and 3GPh‐5CzBN‐based counterparts, respectively. This work demonstrates the cutting‐edge EQE of solution‐processable narrowband devices, highlighting unique advantages of structural control for dendritic molecules.

Article Details

Volume / Issue Vol. 38, Issue 5
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (8)

G

Guimin Zhao

Jiangsu Province Hi-Tech Key Laboratory for Bio-Medical Research, Jiangsu Engineering Laboratory of Smart Carbon-Rich Materials and Device, School of Chemistry and Engineering

Z

Zhengmao Zhang

Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics Jiangsu Engineering Laboratory of Smart Carbon‐Rich Materials and Device School of Chemistry and Engineering Southeast University Nanjing Jiangsu 211189 China

Y

Yuheng Lou

Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics Jiangsu Engineering Laboratory of Smart Carbon‐Rich Materials and Device School of Chemistry and Engineering Southeast University Nanjing Jiangsu 211189 China

S

Shuai Lv

W

Wenwen Tian

Department of Biology, Washington University in St. Louis

Y

Yueming Sun

H

Hong Yang

The First Affiliated Hospital of Air Force Military Medical University Xi’an China

W

Wei Jiang