Manipulating Room Temperature Phosphorescence Stability of Photoactivated Materials for Multiplex Optical Applications
Abstract
ABSTRACT Photoactivated organic phosphorescent materials have emerged as promising candidates for optoelectronic applications due to their unique combination of remote controllability and dynamic response characteristics. Despite being a critical parameter governing their practical applicability, the photostability of these phosphorescent materials, particularly under prolonged illumination conditions, has not been systematically investigated to date. Here, we present a series of organic phosphorescent materials exhibiting dynamically tunable room‐temperature phosphorescence (RTP) stability under continuous irradiation. These materials show RTP activation upon initial excitation, followed by significant emission attenuation during sustained exposure. Mechanistic studies reveal that the RTP attenuation is attributed to singlet oxygen‐mediated oxidative damage to the phosphorescent chromophores. Through strategic incorporation of antioxidant stabilizers, we achieve remarkable photostability, maintaining 96% of maximum phosphorescence intensity after continuous irradiation for 1500 s. These findings not only elucidate fundamental photo‐stabilization mechanisms of dynamic RTP but also provide a feasible approach for developing stable phosphorescent materials for advanced optoelectronic applications.
Article Details
Authors (12)
Yuteng Feng
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing 211816 China
He Wang
Meng Zhang
Chao Huang
Ju Wang
State Key Laboratory for Crop Stress Resistance and High-Efficiency Production, College of Life Sciences, Northwest A&F University
Lu Liu
Huiling Mao
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing China
Yue Feng
Chenxiao Li
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing 211816 China
Meijuan Ding
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)
Wei Huang
Zhongfu An
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)